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SFT2晶体管资料
SFT206别名:SFT206三极管、SFT206晶体管、SFT206晶体三极管
SFT206生产厂家:DIT
SFT206制作材料:Ge-PNP
SFT206性质:开关管 (S)
SFT206封装形式:直插封装
SFT206极限工作电压:18V
SFT206最大电流允许值:0.25A
SFT206最大工作频率:<1MHZ或未知
SFT206引脚数:3
SFT206最大耗散功率:0.15W
SFT206放大倍数:
SFT206图片代号:D-9
SFT206vtest:18
SFT206htest:999900
- SFT206atest:.25
SFT206wtest:.15
SFT206代换 SFT206用什么型号代替:ASY26,ASY27,ASY48,ASY76,ASY80,3AK32,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SFT2 | SUPER FAST RECTIFIER DIODES FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Superfastrecoverytime *Pb/RoHSFree | SYNSEMI SynSemi,Inc. | ||
SFT2 | SUPER FAST RECTIFIER DIODES 文件:39.91 Kbytes Page:2 Pages | EIC EIC | ||
SFT2 | SUPER FAST RECTIFIER DIODES 文件:42.3 Kbytes Page:2 Pages | EIC EIC | ||
HIGH ENERCY NPN TRANSISTOR [SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | |||
High Energy NPN Transistor 200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve | SSDI SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | |||
HIGH ENERCY NPN TRANSISTOR [SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | |||
High Energy NPN Transistor 200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve | SSDI SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | |||
HIGH ENERCY NPN TRANSISTOR [SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | |||
High Energy NPN Transistor 200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve | SSDI SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage | SSDI SSDI | |||
Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor DualMicrominiaturePackage800mA75VoltsDualNPNTransistor Features: •HighSpeedSwitchingTransistor •MultipleDevicesReduceBoardSpace •HighPowerDissipation:Upto660mW •Replacementfor2N2222AU •TX,TXV,S-LevelScreeningAvailable2/ •NPNComplimentaryP | SSDI SSDI | |||
Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor DualMicrominiaturePackage800mA75VoltsDualNPNTransistor Features: •HighSpeedSwitchingTransistor •MultipleDevicesReduceBoardSpace •HighPowerDissipation:Upto660mW •Replacementfor2N2222AU •TX,TXV,S-LevelScreeningAvailable2/ •NPNComplimentaryP | SSDI SSDI | |||
Dual Microminiature Package 600 mA 60 Volts Complimentary NPN & PNP Transistor DualMicrominiaturePackage600mA60VoltsComplimentaryNPN&PNPTransistor Features: •HighSpeedSwitchingTransistor •MultipleDevicesReduceBoardSpace •HighPowerDissipation:Upto1.2W/devic •TX,TXV,S-Levelscreeningavailable •Replacesboth2N2222AU&am | SSDI SSDI | |||
Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor DualMicrominiaturePackage100mA15VoltsDualNPNTransistor Features: •HighSpeedSwitchingTransistor •Suitableinchopper,UHFandRFapplication •MultipleDevicesReduceBoardSpace •Replacementfor2N2369AU •TX,TXV,S-LevelScreeningAvailable2/ | SSDI SSDI | |||
Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor DualMicrominiaturePackage100mA15VoltsDualNPNTransistor Features: •HighSpeedSwitchingTransistor •Suitableinchopper,UHFandRFapplication •MultipleDevicesReduceBoardSpace •Replacementfor2N2369AU •TX,TXV,S-LevelScreeningAvailable2/ | SSDI SSDI | |||
SFT2907A 60 VOLTS PNP HIGH SPEED LOW POWER TRANSISTOR 600mA60VoltsPNPHighSpeedTransistor Features: •HighSpeedSwitchingTransistor •MultipleDevicesReduceBoardSpace •HighPowerDissipation:Upto500mW •Replacementfor2N2907Aand2N2907AUA •TX,TXV,S-LevelScreeningAvailable2/ •NPNComplimentaryPartsAvail | SSDI SSDI | |||
SFT2907A 60 VOLTS PNP HIGH SPEED LOW POWER TRANSISTOR 600mA60VoltsPNPHighSpeedTransistor Features: •HighSpeedSwitchingTransistor •MultipleDevicesReduceBoardSpace •HighPowerDissipation:Upto500mW •Replacementfor2N2907Aand2N2907AUA •TX,TXV,S-LevelScreeningAvailable2/ •NPNComplimentaryPartsAvail | SSDI SSDI | |||
50 mA, 30 Volt, 1 nsec High Speed Analog N-Channel DMOSFET switch 文件:116.49 Kbytes Page:2 Pages | SSDI SSDI | |||
NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI SSDI | |||
800 mA 75 Volts NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI SSDI | |||
NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI SSDI | |||
Dual NPN Transistor 文件:162.09 Kbytes Page:2 Pages | SSDI SSDI | |||
Dual NPN Transistor 文件:162.09 Kbytes Page:2 Pages | SSDI SSDI | |||
Dual NPN Transistor 文件:162.09 Kbytes Page:2 Pages | SSDI SSDI | |||
NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI SSDI | |||
NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI SSDI | |||
Dual NPN Transistor 文件:133.02 Kbytes Page:2 Pages | SSDI SSDI | |||
Dual NPN Transistor 文件:133.02 Kbytes Page:2 Pages | SSDI SSDI | |||
Dual NPN Transistor 文件:133.02 Kbytes Page:2 Pages | SSDI SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI SSDI | |||
Dual Microminiature Package 600 mA 60 Volts Dual PNP Transistor 文件:170.84 Kbytes Page:2 Pages | SSDI SSDI | |||
Dual PNP Transistor 文件:162.15 Kbytes Page:2 Pages | SSDI SSDI | |||
Dual PNP Transistor 文件:162.15 Kbytes Page:2 Pages | SSDI SSDI | |||
Dual Microminiature Package 600 mA 60 Volts Dual PNP Transistor 文件:170.84 Kbytes Page:2 Pages | SSDI SSDI | |||
Dual PNP Transistor 文件:162.15 Kbytes Page:2 Pages | SSDI SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI SSDI |
SFT2产品属性
- 类型
描述
- 型号
SFT2
- 制造商
EIC
- 制造商全称
EIC discrete Semiconductors
- 功能描述
SUPER FAST RECTIFIER DIODES
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
CAN3 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
MSC |
04+ |
原厂封装 |
58 |
宇航IC只做原装假一罚十 |
|||
OMRON |
DIP |
200 |
|||||
BUSS |
19+ |
SMD |
20000 |
490 |
|||
BUSS |
23+ |
SMD |
20000 |
原厂原装正品现货 |
|||
ST |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
BUSS |
23+ |
SMD |
12000 |
全新原装优势 |
|||
ST |
专业铁帽 |
CAN3 |
500 |
原装铁帽专营,代理渠道量大可订货 |
|||
BUSS |
23+ |
SMD |
999999 |
原装正品现货量大可订货 |
SFT2规格书下载地址
SFT2参数引脚图相关
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- SFT3019
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- SFT237
- SFT235
- SFT234A
- SFT234
- SFT233
- SFT232
- SFT229
- SFT228
- SFT227
- SFT226
- SFT223
- SFT222
- SFT221
- SFT214
- SFT213
- SFT212
- SFT211
- SFT208
- SFT207
- SFT206
- SFT2014
- SFT2012
- SFT2010
- SFT191
- SFT190
- SFT18G
- SFT187
- SFT186
- SFT185
- SFT184
- SFT18
- SFT17G
- SFT174
- SFT173
- SFT172
- SFT171
- SFT170
- SFT17
- SFT16G
- SFT163
- SFT162
- SFT1618
- SFT16
- SFT15G
- SFT155
- SFT153
- SFT152
- SFT151
- SFT150
- SFT15
- SFT14G
- SFT146
- SFT1458
- SFT1452
- SFT1450
- SFT145
- SFT1446
- SFT1445
- SFT1443
- SFT1440
- SFT1431
- SFT1427
- SFT1423
SFT2数据表相关新闻
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联系人:刘冬英 公司电话:0755-83203002 手机:18138231376 QQ号:1546282226、微信号:18138231376 公司名称:深圳市光华微科技有限公司 公司地址:深圳市福田区振兴路华匀大厦1栋712室
2019-5-6SG1503T-精密2.5伏参考...
描述这种单片集成电路是一个完全独立的精密电压参考发生器,内部装饰为±1%的准确度。需要较少比静态电流为2mA,这种装置可以提供10mA的过剩的总负载和线路引起的误差小于0.5%。另外本计画为电压精度,实现了内部修整温度系数的输出电压通常为10ppm的/°C的因此,这些提法应用关键仪器和D很好的选择到一个转换器系统。该SG1503规定工作在整个军事环境温度范围-55°C至125°C,而在SG2503是专为-25°C至85°C和0℃的商业应用SG3503至70℃特征·输出电压调整到±1%·输入电压范围
2013-3-15
DdatasheetPDF页码索引
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