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SFT2晶体管资料
SFT206别名:SFT206三极管、SFT206晶体管、SFT206晶体三极管
SFT206生产厂家:DIT
SFT206制作材料:Ge-PNP
SFT206性质:开关管 (S)
SFT206封装形式:直插封装
SFT206极限工作电压:18V
SFT206最大电流允许值:0.25A
SFT206最大工作频率:<1MHZ或未知
SFT206引脚数:3
SFT206最大耗散功率:0.15W
SFT206放大倍数:
SFT206图片代号:D-9
SFT206vtest:18
SFT206htest:999900
- SFT206atest:0.25
SFT206wtest:0.15
SFT206代换 SFT206用什么型号代替:ASY26,ASY27,ASY48,ASY76,ASY80,3AK32,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SFT2 | SUPER FAST RECTIFIER DIODES FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Super fast recovery time * Pb / RoHS Free | SYNSEMI | ||
SFT2 | SUPER FAST RECTIFIER DIODES 文件:42.3 Kbytes Page:2 Pages | EIC | ||
SFT2 | SUPER FAST RECTIFIER DIODES 文件:39.91 Kbytes Page:2 Pages | EIC | ||
SFT2 | Rectifiers: Super Fast Recovery | SYNSEMI | ||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
HIGH ENERCY NPN TRANSISTOR [SSDI] 2N5094 AND 2N5096 HIGH VOLTAGE PNP TRANSISTOR 450 - 500 VOLTS SFT2010, SFT2012, SFT2014 200 AMP HIGH ENERGY NPN TRANSISTOR VCEO 100, 120, 140 VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
High Energy NPN Transistor 200 AMP 100 – 140 Volt High Energy NPN Transistor Features: • BVCBO= 250 V MIN • 600 Watts Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Reliability Construction • Planar Chip Construction with Low Leakage and Very Fast Switching • TX, TXV, S-Leve | SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
HIGH ENERCY NPN TRANSISTOR [SSDI] 2N5094 AND 2N5096 HIGH VOLTAGE PNP TRANSISTOR 450 - 500 VOLTS SFT2010, SFT2012, SFT2014 200 AMP HIGH ENERGY NPN TRANSISTOR VCEO 100, 120, 140 VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
High Energy NPN Transistor 200 AMP 100 – 140 Volt High Energy NPN Transistor Features: • BVCBO= 250 V MIN • 600 Watts Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Reliability Construction • Planar Chip Construction with Low Leakage and Very Fast Switching • TX, TXV, S-Leve | SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
HIGH ENERCY NPN TRANSISTOR [SSDI] 2N5094 AND 2N5096 HIGH VOLTAGE PNP TRANSISTOR 450 - 500 VOLTS SFT2010, SFT2012, SFT2014 200 AMP HIGH ENERGY NPN TRANSISTOR VCEO 100, 120, 140 VOLTS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
High Energy NPN Transistor 200 AMP 100 – 140 Volt High Energy NPN Transistor Features: • BVCBO= 250 V MIN • 600 Watts Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Reliability Construction • Planar Chip Construction with Low Leakage and Very Fast Switching • TX, TXV, S-Leve | SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
200 AMP 100-140 VOLTS NPN TRANSISTOR 200 AMP 100 – 140 VOLTS NPN TRANSISTOR Features: • BV(CBO) = 250 Volts minimum • 600 W Power Dissipation • Excellent SOA Curve • Es/b of 800mJ • Gain of over 5 at 200A • High Rel Construction including Gold Eutectic Die Mounting, Aluminum Wiring • Planar Chip Construction with Low Leakage | SSDI | |||
Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor Features: • High Speed Switching Transistor • Multiple Devices Reduce Board Space • High Power Dissipation: Up to 660 mW • Replacement for 2N2222AU • TX, TXV, S-Level Screening Available 2/ • NPN Complimentary P | SSDI | |||
Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor Features: • High Speed Switching Transistor • Multiple Devices Reduce Board Space • High Power Dissipation: Up to 660 mW • Replacement for 2N2222AU • TX, TXV, S-Level Screening Available 2/ • NPN Complimentary P | SSDI | |||
Dual Microminiature Package 600 mA 60 Volts Complimentary NPN & PNP Transistor Dual Microminiature Package 600 mA 60 Volts Complimentary NPN & PNP Transistor Features: • High Speed Switching Transistor • Multiple Devices Reduce Board Space • High Power Dissipation: Up to 1.2 W / devic • TX, TXV, S-Level screening available • Replaces both 2N2222AU &am | SSDI | |||
Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor Features: • High Speed Switching Transistor • Suitable in chopper, UHF and RF application • Multiple Devices Reduce Board Space • Replacement for 2N2369AU • TX, TXV, S-Level Screening Available 2/ | SSDI | |||
Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor Features: • High Speed Switching Transistor • Suitable in chopper, UHF and RF application • Multiple Devices Reduce Board Space • Replacement for 2N2369AU • TX, TXV, S-Level Screening Available 2/ | SSDI | |||
SFT2907A 60 VOLTS PNP HIGH SPEED LOW POWER TRANSISTOR 600 mA 60 Volts PNP High Speed Transistor Features: • High Speed Switching Transistor • Multiple Devices Reduce Board Space • High Power Dissipation: Up to 500 mW • Replacement for 2N2907A and 2N2907AUA • TX, TXV, S-Level Screening Available2/ • NPN Complimentary Parts Avail | SSDI | |||
SFT2907A 60 VOLTS PNP HIGH SPEED LOW POWER TRANSISTOR 600 mA 60 Volts PNP High Speed Transistor Features: • High Speed Switching Transistor • Multiple Devices Reduce Board Space • High Power Dissipation: Up to 500 mW • Replacement for 2N2907A and 2N2907AUA • TX, TXV, S-Level Screening Available2/ • NPN Complimentary Parts Avail | SSDI | |||
SFT2907A 60 VOLTS PNP HIGH SPEED LOW POWER TRANSISTOR 600 mA 60 Volts PNP High Speed Transistor Features: • High Speed Switching Transistor • Multiple Devices Reduce Board Space • High Power Dissipation: Up to 500 mW • Replacement for 2N2907A and 2N2907AUA • TX, TXV, S-Level Screening Available2/ • NPN Complimentary Parts Avail | SSDI | |||
200 A,100 V High Energy NPN Transistor | SSDI | |||
200 A,120 V High Energy NPN Transistor | SSDI | |||
50 mA, 30 Volt, 1 nsec High Speed Analog N-Channel DMOSFET switch 文件:116.49 Kbytes Page:2 Pages | SSDI | |||
NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI | |||
800 mA 75 Volts NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI | |||
NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI | |||
Dual NPN Transistor 文件:162.09 Kbytes Page:2 Pages | SSDI | |||
Dual NPN Transistor 文件:162.09 Kbytes Page:2 Pages | SSDI | |||
Dual NPN Transistor 文件:162.09 Kbytes Page:2 Pages | SSDI | |||
NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI | |||
NPN High Speed Transistor 文件:176.13 Kbytes Page:3 Pages | SSDI | |||
Dual NPN Transistor 文件:133.02 Kbytes Page:2 Pages | SSDI | |||
Dual NPN Transistor 文件:133.02 Kbytes Page:2 Pages | SSDI | |||
Dual NPN Transistor 文件:133.02 Kbytes Page:2 Pages | SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI | |||
Dual PNP Transistor 文件:162.15 Kbytes Page:2 Pages | SSDI | |||
Dual Microminiature Package 600 mA 60 Volts Dual PNP Transistor 文件:170.84 Kbytes Page:2 Pages | SSDI | |||
Dual PNP Transistor 文件:162.15 Kbytes Page:2 Pages | SSDI | |||
Dual PNP Transistor 文件:162.15 Kbytes Page:2 Pages | SSDI | |||
Dual Microminiature Package 600 mA 60 Volts Dual PNP Transistor 文件:170.84 Kbytes Page:2 Pages | SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI | |||
PNP High Speed Transistor 文件:177.82 Kbytes Page:3 Pages | SSDI |
SFT2产品属性
- 类型
描述
- 型号
SFT2
- 制造商
EIC
- 制造商全称
EIC discrete Semiconductors
- 功能描述
SUPER FAST RECTIFIER DIODES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BUSS |
24+ |
SMD |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
ST |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
BUSS |
19+ |
SMD |
20000 |
490 |
|||
SESCO |
23+ |
NA |
119 |
专做原装正品,假一罚百! |
|||
ST/MOTO |
23+ |
CAN to-39 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
MSC |
18+ |
原厂原装假一赔十 |
58 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
|||
ST |
26+ |
CAN3 |
60000 |
只有原装 可配单 |
|||
BUSS |
20+ |
SMD |
492 |
全新 发货1-2天 |
|||
MSC |
25+ |
N/A |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
MSC |
04+ |
原厂封装 |
58 |
宇航IC只做原装假一罚十 |
SFT2规格书下载地址
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SFT2数据表相关新闻
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2024-1-12SFV8R-3STBE1HLF
优势渠道
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2021-7-23SFSD016GN3PM1TO-I-LF-010-SW3
SFSD016GN3PM1TO-I-LF-010-SW3
2021-6-23SFXG50UZ502深圳市光华微科技有限公司18138231376
联系人:刘冬英 公司电话:0755-83203002 手机:18138231376 QQ号:1546282226、微信号:18138231376 公司名称:深圳市光华微科技有限公司 公司地址:深圳市福田区振兴路华匀大厦1栋712室
2019-5-6SG1503T-精密2.5伏参考...
描述 这种单片集成电路是一个完全独立的精密电压参考发生器,内部装饰为± 1%的准确度。需要较少比静态电流为2mA,这种装置可以提供10mA的过剩的总负载和线路引起的误差小于0.5%。另外本计画为电压精度,实现了内部修整温度系数的输出电压通常为10 ppm的/° C的因此,这些提法应用关键仪器和D很好的选择到一个转换器系统。该SG1503规定工作在整个军事环境温度范围-55 ° C至125 ° C,而在SG2503是专为-25 ° C至85 ° C和0℃的商业应用SG3503至70℃ 特征 ·输出电压调整到±1% ·输入电压范围
2013-3-15
DdatasheetPDF页码索引
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