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SFT144晶体管资料
SFT144别名：SFT144三极管、SFT144晶体管、SFT144晶体三极管
SFT144生产厂家：DIT
SFT144制作材料：Ge-PNP
SFT144性质：低频或音频放大 （LF）_开关管 （S）
SFT144封装形式：直插封装
SFT144极限工作电压：45V
SFT144最大电流允许值：0.5A
SFT144最大工作频率：<1MHZ或未知
SFT144引脚数：3
SFT144最大耗散功率：0.35W
SFT144放大倍数：
SFT144图片代号：D-20
SFT144vtest：45
SFT144htest：999900
- SFT144atest：0.5
SFT144wtest：0.35
SFT144代换 SFT144用什么型号代替：AC128,AC153,AC193,3AX55C,
SFT144价格
参考价格：￥1.8555
型号：SFT1440-E 品牌：ON 备注：这里有SFT144多少钱，2026年最近7天走势，今日出价，今日竞价，SFT144批发/采购报价，SFT144行情走势销售排行榜，SFT144报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=6.2Ω(typ.) | SANYO 三洋 |   | ||
N-Channel Power MOSFET N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 1.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-Channel Power MOSFET N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 1.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-Channel Power MOSFET N-Channel Power MOSFET 600V, 1.5A, 8.1Ω, Single TP/TP-FA Features • ON-resistance RDS(on)=6.2Ω(typ.) • Protection diode in | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=180mΩ(typ.) • Input Capacitance Ciss=490pF(typ.) • 4V drive • Halogen free compliance | SANYO 三洋 | | ||
N-Channel Power MOSFET 100V, 9A, 225m, Single TP/TP-FA Features • ON-resistance RDS(on)1=180mΩ(typ.) • Input Capacitance Ciss=490pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 225mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 225mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance | SANYO 三洋 | | ||
N 沟道，功率 MOSFET，100V，17A，111mΩ，单 TP/TP-FA SFT1445 是一款 N 沟道功率 MOSFET，100V，17A，111mΩ，单 TP/TP-FA，适用于通用开关设备应用。 • ON-resistance RDS(on)1 = 85mΩ (typ)\n• 4V drive \n• Input Capacitance Ciss = 1030pF (typ)\n• Halogen free compliance\n• Protection diode in; | ONSEMI 安森美半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | BYCHIP 百域芯 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 111mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 111mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET 60V, 20A, 51m, Single TP/TP-FA Features • ON-resistance RDS(on)1=39mΩ(typ.) • Input Capacitance Ciss=750pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=39mΩ(typ) • Input Capacitance Ciss=750pF(typ) • 4V drive • Halogen free compliance | SANYO 三洋 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 51mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-Channel Power MOSFET 60V, 20A, 51m, Single TP/TP-FA Features • ON-resistance RDS(on)1=39mΩ(typ.) • Input Capacitance Ciss=750pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 51mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-Channel Power MOSFET 60V, 20A, 51m, Single TP/TP-FA Features • ON-resistance RDS(on)1=39mΩ(typ.) • Input Capacitance Ciss=750pF(typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
N-Channel 650V (D-S)Power MOSFET 文件：1.08194 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08635 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08645 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET 100V, 9A, 225m, Single TP/TP-FA | ONSEMI 安森美半导体 | | ||
N-Channel 100-V (D-S) MOSFET 文件：1.05335 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：2.01903 Mbytes Page：4 Pages | DOINGTER 杜因特 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.00916 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 100-V (D-S) MOSFET 文件：1.05343 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.18304 Mbytes Page：4 Pages | DOINGTER 杜因特 | | ||
N-Channel MOSFET uses advanced trench technology 文件：2.49771 Mbytes Page：4 Pages | DOINGTER 杜因特 | | ||
N-Channel 100 V (D-S) MOSFET 文件：954.6 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：960.69 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 6 0-V (D-S) MOSFET 文件：897.65 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The | ONSEMI 安森美半导体 | | ||
NPN SILICON BIAS RESISTOR TRANSISTORS Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit | ONSEMI 安森美半导体 | | ||
PNP resistor-equipped transistor DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
PNP resistor-equipped transistor DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
Bias Resistor Transistor 文件：236.97 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | |
SFT144产品属性
- 类型
描述
- 型号
SFT144
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
General-Purpose Switching Device Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
IPAK/TP |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
25+ |
TO-251 |
32360 |
ONSEMI/安森美全新特价SFT1440-E即刻询购立享优惠#长期有货 |
|||
ON |
24+/25+ |
480 |
原装正品现货库存价优 |
||||
ON |
25+23+ |
TO251 |
72746 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
onsemi |
25+ |
TP-FA |
18746 |
样件支持,可原厂排单订货! |
|||
ON |
22+ |
TO-251 |
20000 |
只做原装 品质保障 |
|||
VBSEMI |
20+ |
TO-251 |
5095 |
全新 发货1-2天 |
|||
ONSEMI/安森美 |
24+ |
TO-251 |
37935 |
郑重承诺只做原装进口现货 |
|||
ON |
26+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ON |
23+ |
NA |
10658 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
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SFT144规格书下载地址
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SFT144数据表相关新闻
SFR10EZPF5103
SFR10EZPF5103
2024-1-12SFV8R-3STBE1HLF
优势渠道
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SFR9230BTM
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联系人：刘冬英 公司电话：0755-83203002 手机：18138231376 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-5-6SG1503T-精密2.5伏参考...
描述 这种单片集成电路是一个完全独立的精密电压参考发生器，内部装饰为± 1％的准确度。需要较少比静态电流为2mA，这种装置可以提供10mA的过剩的总负载和线路引起的误差小于0.5％。另外本计画为电压精度，实现了内部修整温度系数的输出电压通常为10 ppm的/° C的因此，这些提法应用关键仪器和D很好的选择到一个转换器系统。该SG1503规定工作在整个军事环境温度范围-55 ° C至125 ° C，而在SG2503是专为-25 ° C至85 ° C和0℃的商业应用SG3503至70℃ 特征 ·输出电压调整到±1％ ·输入电压范围
2013-3-15
DdatasheetPDF页码索引
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