N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

N 沟道，功率 MOSFET，100V，17A，111mΩ，单 TP/TP-FA

SFT1445 是一款 N 沟道功率 MOSFET，100V，17A，111mΩ，单 TP/TP-FA，适用于通用开关设备应用。 • ON-resistance RDS(on)1 = 85mΩ (typ)\n• 4V drive \n• Input Capacitance Ciss = 1030pF (typ)\n• Halogen free compliance\n• Protection diode in;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 111mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 111mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel Power MOSFET 100V, 17A, 111m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.) • 4V drive • Halogen free compliance • Protection diode in

N-Channel MOSFET uses advanced trench technology

文件：1.18304 Mbytes Page：4 Pages

N-Channel MOSFET uses advanced trench technology

文件：2.49771 Mbytes Page：4 Pages

N-Channel 100 V (D-S) MOSFET

文件：954.6 Kbytes Page：7 Pages

Dot Matrix LED Unit for Outdoor Use (Lamp Type)

■ Features ● No. of dots : 16✕16dots ● Outline dimensions : 160✕160mm ● Dot size : ø7.5mm ● Dot pitch : 10mm ● Radiation color : Yellow-green+Red(High-luminosity)dichromatic type ● Driving method : Static drive

CdS photoconductive cell

CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their operating circ

Ultralow Power Quad Comparators with Reference

文件：176.22 Kbytes Page：12 Pages

Ultralow Power Quad Comparators with Reference

文件：176.22 Kbytes Page：12 Pages

Ultralow Power Quad Comparators with Reference

文件：176.22 Kbytes Page：12 Pages