N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 66mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 66mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

场效应管(MOSFET)

HORIZONTAL DEFLECTION POWER TRANSISTOR

5 AMPERE POWER TRANSISTORS 1500 VOLTS 80 WATTS

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

1.2A Dual High-Speed MOSFET Drivers

GENERAL DESCRIPTION The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

文件：81.03 Kbytes Page：6 Pages

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

文件：81.03 Kbytes Page：6 Pages