EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VCEO=-120V (Min.) • Complementary to KTD1413.

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -2.0V(Max) @IC= -3A APPLICATIONS · Hammer Driver · High Power Switching Applications · Pulse Motor Driver

Darlington transistor, TO-220IS, -120V, -5A

• High DC Current Gain : hFE=1000(min.) at VCE(sat)=-3V, Ic=-3A\n• Complementary to KTD1413.;

EPITAXIAL PLANAR PNP TRANSISTOR

文件：448.91 Kbytes Page：2 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：448.91 Kbytes Page：2 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：448.91 Kbytes Page：2 Pages

5-Dot Red/Green LED Level Meter

SMALL SIGNAL GaAs FET?

DESCRIPTION The MGF1423B, low-noise GaAs FET with an N-channel Schottky gate, is designed for use in S to Ku band amplifiers. FEATURES ● High linear power gain GLP = 11 dB (TYP.) @ f = 12 GHz ● High output power at 1 dB gain compression P1dB = 13dBm (TYP.) @ f = 12 GHz ● High reliabil

RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. ■

HIGH PERFORMANCE 4K X 4 CMOS STATIC RAM

文件：298 Kbytes Page：8 Pages