Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS= -250V ■ Low RDS(ON) : 0.876 Ω(Typ.)

Advanced Power MOSFET

POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER

DESCRIPTION The PS9634 and PS9634L are optical linkage devices mounting a GaAs infrared ray LED on the light emitting side (input side) and a photo diode and a signal processing circuit on the light receiving side (output side) on one chip. They can directly drive a power transistor of 15 to 20

POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER

DESCRIPTION The PS9634 and PS9634L are optical linkage devices mounting a GaAs infrared ray LED on the light emitting side (input side) and a photo diode and a signal processing circuit on the light receiving side (output side) on one chip. They can directly drive a power transistor of 15 to 20

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 μA (Max.) @ VDS = -250V ■ Low RDS(ON) : 0.876 Ω (Typ.)

Advanced Power MOSFET

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