POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER

DESCRIPTION The PS9634 and PS9634L are optical linkage devices mounting a GaAs infrared ray LED on the light emitting side (input side) and a photo diode and a signal processing circuit on the light receiving side (output side) on one chip. They can directly drive a power transistor of 15 to 20

POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE OPTOCOUPLER

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封装/外壳：8-SMD，鸥翼 包装：散装 描述：OPTOISO 5KV FOR IGBT DVR 8SMD GW 隔离器 特殊用途

POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER

DESCRIPTION The PS9634 and PS9634L are optical linkage devices mounting a GaAs infrared ray LED on the light emitting side (input side) and a photo diode and a signal processing circuit on the light receiving side (output side) on one chip. They can directly drive a power transistor of 15 to 20

POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER

DESCRIPTION The PS9634 and PS9634L are optical linkage devices mounting a GaAs infrared ray LED on the light emitting side (input side) and a photo diode and a signal processing circuit on the light receiving side (output side) on one chip. They can directly drive a power transistor of 15 to 20

封装/外壳：8-SMD，鸥翼 包装：散装 描述：OPTOISO 5KV FOR IGBT DVR 8SMD GW 隔离器 特殊用途

POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER

12-Bit, 170 MSPS/210 MSPS/250 MSPS

GENERAL DESCRIPTION The AD9634 is a 12-bit, analog-to-digital converter (ADC) with sampling speeds of up to 250 MSPS. The AD9634 is designed to support communications applications where low cost, small size, wide bandwidth, and versatility are desired. FEATURES SNR = 69.7 dBFS at 185 MHz AI

Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the designer with the best combinati

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat

1.8 V Analog-to-Digital Converter

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Switching Regulator ICs

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