Pulsed Laser Diode in Plastic Package 10 W Peak Class 3 Laser Product

Features • Low cost plastic package • Reliable strained InGaAs/GaAs material • High power large-optical-cavity structure • Single emitting area 200 µm × 2 µm Applications • Range finding • Security, surveillance • Illumination, ignition • Testing and measurement

Pulsed Laser Diode in Plastic Package 10 W Peak Class 3 Laser Product

SOP-8 Plastic-Encapsulate MOSFETS

Description The 4884 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

40V Dual N-Channel MOSFET

General Description The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Product Summary VDS 40V ID

Monolithic Crystal Filter

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N-Channel Enhancement Mode MOSFET

文件：455.86 Kbytes Page：7 Pages

Dual N-Channel MOSFET

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