GaAIAs-IR-Lumineszenzdioden880nmGaAIAsInfraredEmitters880nm

Features ●Fabricatedinaliquidphaseepitaxyprocess ●Suitableforsurfacemounting(SMT) ●Availableontapeandreel ●SamepackageasphotodiodeSFH2500/SFH2505 ●Highreliability ●Spectralmatchwithsiliconphotodetectors Applications ●IRremotecontrolofhi-fiandTV-sets,v

GaAlAsInfraredEmitters(880nm)inSMR짰Package

文件：81.31 Kbytes Page：7 Pages

GaAlAs-IR-Lumineszenzdioden(880nm)inSMR짰Geh채use

文件：159.44 Kbytes Page：9 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8.5A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

CMOS4-BITMAGNITUDECOMPARATOR

文件：556.8 Kbytes Page：3 Pages

Heyco®-TiteBrassLiquidTightCordgrips

文件：267.06 Kbytes Page：1 Pages