GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

Features ● Fabricated in a liquid phase epitaxy process ● Suitable for surface mounting (SMT) ● Available on tape and reel ● Same package as photodiode SFH 2500/SFH 2505 ● High reliability ● Spectral match with silicon photodetectors Applications ● IR remote control of hi-fi and TV-sets, v

GaAlAs Infrared Emitters (880 nm) in SMR짰 Package

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GaAlAs Infrared Emitters (880 nm) in SMR® Package

GaAlAs-IR-Lumineszenzdioden (880 nm) in SMR짰 Geh채use

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.85Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

Heyco®-Tite Brass Liquid Tight Cordgrips

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CMOS 4-BIT MAGNITUDE COMPARATOR

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Heyco®-Tite Brass Liquid Tight Cordgrips

文件：267.06 Kbytes Page：1 Pages