High Power Infrared Emitter (940nm) in SMR® Package

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - SMR® (Surface Mount Radial) package - Same package as photodiode SFH 2500 - Short switching times 

OSRAM Radial SMR, SFH 4542

采用SMR®封装的高功率红外发射管 (940nm)

High Power Infrared Emitter (940nm) in SMR

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High Power Infrared Emitter (940nm) in SMR® Package

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - SMR® (Surface Mount Radial) package - Same package as photodiode SFH 2500 - Short switching times 

High Power Infrared Emitter (940nm) in SMR® Package

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - SMR® (Surface Mount Radial) package - Same package as photodiode SFH 2500 - Short switching times 

Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches

The MAX4541–MAX4544 are precision, dual analog switches designed to operate from a single +2.7V to +12V supply. Low power consumption (5µW) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON= 150ns max, tOFF=

Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches

The MAX4541–MAX4544 are precision, dual analog switches designed to operate from a single +2.7V to +12V supply. Low power consumption (5µW) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON= 150ns max, tOFF=

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS