GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm

Features ● Fabricated in a liquid phase epitaxy process ● Suitable for surface mounting (SMT) ● Available on tape and reel ● Same package as photodiode SFH 2500/SFH 2505 and phototransistor SFH 3500/SFH 3505 ● High reliability ● Spectral match with silicon photodetectors Applications ● IR

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant

GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant Features • Very highly efficient GaAs-LED • 5mm plastic package • Peak Wavelength 950 nm • Very narrow radiation Angle (± 4 Deg.) • High radiant intensity • High reliability Applications • IR remote control of hi-fi and TV-set

GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm

Features ● Fabricated in a liquid phase epitaxy process ● Suitable for surface mounting (SMT) ● Available on tape and reel ● Same package as photodiode SFH 2500/SFH 2505 and phototransistor SFH 3500/SFH 3505 ● High reliability ● Spectral match with silicon photodetectors Applications ● IR

PLASTIC FIBER OPTIC TRANSMITTER DIODE

GaAs Infrared Emitters (950 nm) in SMR짰 Package

文件：77.03 Kbytes Page：7 Pages

GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm

GaAs Infrared Emitters (950 nm) in SMR짰 Package

文件：77.03 Kbytes Page：7 Pages

Spectral match with silicon photodetectors

文件：160.16 Kbytes Page：11 Pages

UL version available

文件：183.62 Kbytes Page：11 Pages

Low-Cost, Versatile, 10/100kHz Frequency to Voltage Converters

文件：1.47546 Mbytes Page：6 Pages

Low-Cost, Versatile, 10/100kHz Frequency to Voltage Converters

文件：44.12 Kbytes Page：1 Pages

NANO2 FUSE Very Fast-Acting 451/453 Series

文件：102.39 Kbytes Page：1 Pages

Ribbon Cable Wiremount Socket Assembly

文件：126.46 Kbytes Page：2 Pages

Capacity (20-hour) 180Ah

文件：304.56 Kbytes Page：1 Pages