GaAs INFRARED EMITTER DOUBLE EMITTING DIODE

DESCRIPTION The SFH 435 is a two-beam GaAs infrared emitting diode with one chip. The beams emerge diametrically from the diode in a half angle of 8 degrees. The radiation is emitted in the near infrared range. It is excited by a current flowing in forward direction, dc as well as pulse operatio

GaAs INFRARED EMITTER DOUBLE EMITTING DIODE

High Power Infrared Emitter (850 nm)

Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - Emission angle ± 13° - Very high radiant intensity - Short switching times - UL version available (ordering code & test conditions on request) 

High Power Infrared Emitter (850 nm)

Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - Emission angle ± 13° - Very high radiant intensity - Short switching times - UL version available (ordering code & test conditions on request) 

High Power Infrared Emitter (850 nm)

文件：257.3 Kbytes Page：7 Pages

High Power Infrared Emitter

文件：390.89 Kbytes Page：9 Pages

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件：144.15 Kbytes Page：8 Pages

OSRAM Radial T1, SFH 4350

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件：144.15 Kbytes Page：8 Pages

High Power Infrared Emitter

文件：390.89 Kbytes Page：9 Pages

High Power Infrared Emitter

文件：390.89 Kbytes Page：9 Pages

OSRAM Radial T1, SFH 4356

Infrared Emitter (850 nm)

文件：435.48 Kbytes Page：11 Pages

Infrared Emitter (850 nm)

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435 Series 0402 Fast-Acting Fuse

Description The 435 Series are fast-acting surface mount thin-film fuses. Their ultra-small size (0402 size) makes them ideal for secondary protection of circuits used in space constrained applications such as hand-held portable electronic devices. This series is 100 lead-free and meet the re

Passive PoE Injector Cable Set

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SPACERS & STANDOFFS

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Surface Mount Fuses - Thin-Film Surface Mount

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HCMOS Output

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