SFH425价格

参考价格:¥3.3908

型号:SFH4250S 品牌:OSRAM 备注:这里有SFH425多少钱,2025年最近7天走势,今日出价,今日竞价,SFH425批发/采购报价,SFH425行情走势销售排行榜,SFH425报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SFH425

GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package

文件:48.7 Kbytes Page:5 Pages

SIEMENS

西门子

SFH425

GaAs Infrared Emitter in SMT Package

文件:138.29 Kbytes Page:7 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter (850 nm)

Features: • High forward current allowed at high temperature • High Power Infrared LED • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared I

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter (850 nm)

Features • High Power Infrared LED • Peak wavelength typ. 850 nm Applications • Infrared Illumination for CMOS cameras • IR Data Transmission • Optical sensors

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

Features: • High Power Infrared LED • Short switching time • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for cameras • IR data transmission • Se

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Features: • High Power Infrared LED • Short switching time • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for cameras • IR data transmission • Se

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Features: • High Power Infrared LED • Short switching time • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for cameras • IR data transmission • Se

OSRAM

艾迈斯欧司朗

SIDELED® High Power Infrared Emitter (850 nm)

Features: —Package: clear epoxy —Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —Short switching times

AMSCO

艾迈斯欧司朗

SIDELED® High Power Infrared Emitter (850 nm)

Features: —Package: clear epoxy —Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —Short switching times

AMSCO

艾迈斯欧司朗

TOPLED® Black High Power Infrared Emitter (850 nm)

Features: —Package: clear epoxy —Qualifications: AEC-Q102 Qualified —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —High Power Infrared LED —Black coloured TOPLED-package —Improved imaging characteristics due to absorption of side emission —Short switching times

AMSCO

艾迈斯欧司朗

High Power Infrared Emitter (850 nm)

Features: • High Power Infrared LED • Black coloured TOPLED-package • Improved imaging characteristics due to absorption of side emission • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade

OSRAM

艾迈斯欧司朗

TOPLED® Black High Power Infrared Emitter (850 nm)

Features: —Package: clear epoxy —Qualifications: AEC-Q102 Qualified —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —High Power Infrared LED —Black coloured TOPLED-package —Improved imaging characteristics due to absorption of side emission —Short switching times

AMSCO

艾迈斯欧司朗

High Power Infrared Emitter (850 nm)

Features: • Infrared LED with high power output • Peak wavelength typ. 850 nm • Black coloured TOPLED-package • Improved imaging characteristics due to absorption of side emission Applications • Miniature and long distance photointerrupters (in combination with external optics) • Rain Senso

OSRAM

艾迈斯欧司朗

TOPLED® Black High Power Infrared Emitter (850 nm)

Features: —Package: clear epoxy —Qualifications: AEC-Q102 Qualified —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —High Power Infrared LED —Black coloured TOPLED-package —Improved imaging characteristics due to absorption of side emission —Short switching times

AMSCO

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Features

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Features • Hig

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Features

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Features

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Features • Hig

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Features • Hig

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Features • Hig

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件:157.38 Kbytes Page:10 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:456.47 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件:157.38 Kbytes Page:10 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:456.47 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:456.47 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:456.47 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:420.16 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:420.16 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:420.16 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter (850 nm)

文件:279.64 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter (850 nm)

文件:225.3 Kbytes Page:9 Pages

OSRAM

艾迈斯欧司朗

10IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件:152.66 Kbytes Page:10 Pages

OSRAM

艾迈斯欧司朗

High Power

文件:402.84 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

10IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件:152.66 Kbytes Page:10 Pages

OSRAM

艾迈斯欧司朗

High Power

文件:402.84 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power

文件:402.84 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:425.64 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:425.64 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:432.36 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:432.36 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:432.36 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

Emitters and Detectors for Infrared (IR) Touchscreens

文件:275.82 Kbytes Page:14 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:448.94 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件:176.91 Kbytes Page:11 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter (850 nm)

文件:250.39 Kbytes Page:10 Pages

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件:176.91 Kbytes Page:11 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:448.94 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:448.99 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:448.99 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

文件:448.94 Kbytes Page:13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter (850 nm)

文件:250.39 Kbytes Page:10 Pages

OSRAM

艾迈斯欧司朗

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件:176.91 Kbytes Page:11 Pages

OSRAM

艾迈斯欧司朗

Surface Mount Quartz Crystal

文件:136.59 Kbytes Page:3 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

Surface Mount Quartz Crystal

文件:233.13 Kbytes Page:3 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

SFH425产品属性

  • 类型

    描述

  • 型号

    SFH425

  • 功能描述

    EMITTER IR 950NM R/A SMD

  • RoHS

  • 类别

    光电元件 >> 红外发射极

  • 系列

    -

  • 标准包装

    1,200

  • 系列

    - 电流 - DC

  • 正向(If)

    100mA

  • 辐射强度(le)最小值@正向电流

    27mW/sr @ 100mA

  • 波长

    940nm

  • 正向电压

    1.6V

  • 视角

    40°

  • 方向

    顶视图

  • 安装类型

    通孔

  • 封装/外壳

    径向

  • 包装

    带卷(TR)

更新时间:2025-8-6 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
OSRAM
15+
SMD
9300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
OSRAM
23+
SMD
50000
只做原装正品
OSRAM/欧司朗
25+
SMD
64581
百分百原装现货 实单必成 欢迎询价
OSRAM/欧司朗
23+
SMD
25000
只做进口原装假一罚百
OSRAM
2450+
SMD
6885
只做原装正品假一赔十为客户做到零风险!!
osram
23+
NA
2846
专做原装正品,假一罚百!
OSRAM
23+
SMD1210
8500
原厂原装正品
OSRAM
24+
SMD4
39500
进口原装现货 支持实单价优
N/A
25+
NA
880000
明嘉莱只做原装正品现货
OSRAM(欧司朗)
24+
-
11048
原厂可订货,技术支持,直接渠道。可签保供合同

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