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SFH425价格
参考价格：￥3.3908
型号：SFH4250S 品牌：OSRAM 备注：这里有SFH425多少钱，2024年最近7天走势，今日出价，今日竞价，SFH425批发/采购报价，SFH425行情走势销售排行榜，SFH425报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SFH425 | GaAs-IR-LumineszenzdiodeinSMT-GehauseGaAsInfraredEmitterinSMTPackage 文件：48.7 Kbytes Page：5 Pages | SIEMENS Siemens Ltd |  |   |
SFH425 | GaAsInfraredEmitterinSMTPackage 文件：138.29 Kbytes Page：7 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 |  | |
HighPowerInfraredEmitter(850nm) Features: •Highforwardcurrentallowedathightemperature •HighPowerInfraredLED •Shortswitchingtimes •TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. Applications •InfraredI | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter Features: •HighPowerInfraredLED •DoubleStackemitter •Shortswitchingtimes •Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications •InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung Features: •HighPowerInfraredLED •DoubleStackemitter •Shortswitchingtimes •Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications •InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter Features: •HighPowerInfraredLED •DoubleStackemitter •Shortswitchingtimes •Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications •InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter Features: •HighPowerInfraredLED •DoubleStackemitter •Shortswitchingtimes •Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications •InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter Features: •HighPowerInfraredLED •DoubleStackemitter •Shortswitchingtimes •Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications •InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter(850nm) Features •HighPowerInfraredLED •Peakwavelengthtyp.850nm Applications •InfraredIlluminationforCMOScameras •IRDataTransmission •Opticalsensors | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung Features: •HighPowerInfraredLED •Shortswitchingtime •TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. Applications •InfraredIlluminationforcameras •IRdatatransmission •Se | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter Features: •HighPowerInfraredLED •Shortswitchingtime •TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. Applications •InfraredIlluminationforcameras •IRdatatransmission •Se | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter Features: •HighPowerInfraredLED •Shortswitchingtime •TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. Applications •InfraredIlluminationforcameras •IRdatatransmission •Se | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
SIDELED®HighPowerInfraredEmitter(850nm) Features: —Package:clearepoxy —Qualifications:TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C, StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —Shortswitchingtimes | AMSCO austriamicrosystems AG |  | | |
SIDELED®HighPowerInfraredEmitter(850nm) Features: —Package:clearepoxy —Qualifications:TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C, StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —Shortswitchingtimes | AMSCO austriamicrosystems AG | | | |
TOPLED®BlackHighPowerInfraredEmitter(850nm) Features: —Package:clearepoxy —Qualifications:AEC-Q102Qualified —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —HighPowerInfraredLED —BlackcolouredTOPLED-package —Improvedimagingcharacteristicsduetoabsorptionofsideemission —Shortswitchingtimes | AMSCO austriamicrosystems AG | | | |
HighPowerInfraredEmitter(850nm) Features: •HighPowerInfraredLED •BlackcolouredTOPLED-package •Improvedimagingcharacteristicsduetoabsorptionofsideemission •Shortswitchingtimes •TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGrade | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
TOPLED®BlackHighPowerInfraredEmitter(850nm) Features: —Package:clearepoxy —Qualifications:AEC-Q102Qualified —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —HighPowerInfraredLED —BlackcolouredTOPLED-package —Improvedimagingcharacteristicsduetoabsorptionofsideemission —Shortswitchingtimes | AMSCO austriamicrosystems AG | | | |
HighPowerInfraredEmitter(850nm) Features: •InfraredLEDwithhighpoweroutput •Peakwavelengthtyp.850nm •BlackcolouredTOPLED-package •Improvedimagingcharacteristicsduetoabsorptionofsideemission Applications •Miniatureandlongdistancephotointerrupters(incombinationwithexternaloptics) •RainSenso | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
TOPLED®BlackHighPowerInfraredEmitter(850nm) Features: —Package:clearepoxy —Qualifications:AEC-Q102Qualified —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —HighPowerInfraredLED —BlackcolouredTOPLED-package —Improvedimagingcharacteristicsduetoabsorptionofsideemission —Shortswitchingtimes | AMSCO austriamicrosystems AG | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung SafetyAdvices Dependingonthemodeofoperation,thesedevicesemithighlyconcentratednonvisible infraredlightwhichcanbehazardoustothehumaneye.Productswhichincorporatethese deviceshavetofollowthesafetyprecautionsgiveninIEC60825-1andIEC62471. Features | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter SafetyAdvices Dependingonthemodeofoperation,thesedevicesemithighlyconcentratednonvisibleinfraredlightwhichcanbehazardoustothehumaneye.ProductswhichincorporatethesedeviceshavetofollowthesafetyprecautionsgiveninIEC60825-1andIEC62471. Features •Hig | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter SafetyAdvices Dependingonthemodeofoperation,thesedevicesemithighlyconcentratednonvisible infraredlightwhichcanbehazardoustothehumaneye.Productswhichincorporatethese deviceshavetofollowthesafetyprecautionsgiveninIEC60825-1andIEC62471. Features | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung SafetyAdvices Dependingonthemodeofoperation,thesedevicesemithighlyconcentratednonvisible infraredlightwhichcanbehazardoustothehumaneye.Productswhichincorporatethese deviceshavetofollowthesafetyprecautionsgiveninIEC60825-1andIEC62471. Features | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter SafetyAdvices Dependingonthemodeofoperation,thesedevicesemithighlyconcentratednonvisibleinfraredlightwhichcanbehazardoustothehumaneye.ProductswhichincorporatethesedeviceshavetofollowthesafetyprecautionsgiveninIEC60825-1andIEC62471. Features •Hig | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter SafetyAdvices Dependingonthemodeofoperation,thesedevicesemithighlyconcentratednonvisibleinfraredlightwhichcanbehazardoustothehumaneye.ProductswhichincorporatethesedeviceshavetofollowthesafetyprecautionsgiveninIEC60825-1andIEC62471. Features •Hig | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter SafetyAdvices Dependingonthemodeofoperation,thesedevicesemithighlyconcentratednonvisibleinfraredlightwhichcanbehazardoustothehumaneye.ProductswhichincorporatethesedeviceshavetofollowthesafetyprecautionsgiveninIEC60825-1andIEC62471. Features •Hig | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung 文件：157.38 Kbytes Page：10 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：456.47 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung 文件：157.38 Kbytes Page：10 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：456.47 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：456.47 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：456.47 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：420.16 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：420.16 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：420.16 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter(850nm) 文件：279.64 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter(850nm) 文件：225.3 Kbytes Page：9 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
10IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung 文件：152.66 Kbytes Page：10 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPower 文件：402.84 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
10IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung 文件：152.66 Kbytes Page：10 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPower 文件：402.84 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPower 文件：402.84 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：425.64 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：425.64 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：432.36 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：432.36 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：432.36 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
EmittersandDetectorsforInfrared(IR)Touchscreens 文件：275.82 Kbytes Page：14 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：448.94 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung 文件：176.91 Kbytes Page：11 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter(850nm) 文件：250.39 Kbytes Page：10 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung 文件：176.91 Kbytes Page：11 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：448.94 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：448.99 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：448.99 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter 文件：448.94 Kbytes Page：13 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
HighPowerInfraredEmitter(850nm) 文件：250.39 Kbytes Page：10 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung 文件：176.91 Kbytes Page：11 Pages | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
SURFACEMOUNTFUSES 文件：69.61 Kbytes Page：2 Pages | LittelfuseLittelfuse Inc. 力特力特公司 |  | | |
SurfaceMountQuartzCrystal 文件：136.59 Kbytes Page：3 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 |  | |
SFH425产品属性
- 类型
描述
- 型号
SFH425
- 功能描述
EMITTER IR 950NM R/A SMD
- RoHS
否
- 类别
光电元件 >> 红外发射极
- 系列
-
- 标准包装
1,200
- 系列
- 电流 - DC
- 正向(If)
100mA
- 辐射强度(le)最小值@正向电流
27mW/sr @ 100mA
- 波长
940nm
- 正向电压
1.6V
- 视角
40°
- 方向
顶视图
- 安装类型
通孔
- 封装/外壳
径向
- 包装
带卷(TR)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OSRAM/欧司朗 |
2021+ |
NA |
9000 |
原装现货,随时欢迎询价 |
|||
OSRAM |
21+ |
SMD |
9866 |
||||
OSRAM |
2020+ |
SMD |
2000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
OSRAM/欧司朗 |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
OSRAM |
SMD |
33396 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
OSRAM/欧司朗 |
2024+原装现货 |
SMD |
8950 |
BOM配单专家,发货快,价格低 |
|||
OSRAM |
ROHS-NEW |
2PIN |
23680 |
原装长期供应850NM7MW/SROS,SFH4254 |
|||
OSRAM/欧司朗 |
2138+ |
TOPLED |
6900 |
||||
OSRAM |
2023+ |
SMD |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
OSRAM |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
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