High Power Infrared Emitter (850 nm)

Features: • High forward current allowed at high temperature • High Power Infrared LED • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared I

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件：157.38 Kbytes Page：10 Pages

High Power Infrared Emitter

文件：456.47 Kbytes Page：13 Pages

OSRAM Power TOPLED®, SFH 4250

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

文件：157.38 Kbytes Page：10 Pages

High Power Infrared Emitter

文件：456.47 Kbytes Page：13 Pages

High Power Infrared Emitter

文件：456.47 Kbytes Page：13 Pages

OSRAM Power TOPLED®, SFH 4250S

High Power Infrared Emitter

文件：456.47 Kbytes Page：13 Pages

Transistor

Transistor PNP Silicon

INTEGRATED PRESSURE SENSOR 20 to 250 kPa (2.9 to 36.3 psi) 0.2 to 4.9 V OUTPUT

The Motorola MPX4250 series Manifold Absolute Pressure (MAP) sensor for turbo boost engine control is designed to sense absolute air pressure within the intake manifold. This measurement can be used to compute the amount of fuel required for each cylinder. Features • 1.5 Maximum Error Over

INTEGRATED PRESSURE SENSOR 20 to 250 kPa (2.9 to 36.3 psi) 0.2 to 4.9 V OUTPUT

The Motorola MPX4250 series Manifold Absolute Pressure (MAP) sensor for turbo boost engine control is designed to sense absolute air pressure within the intake manifold. This measurement can be used to compute the amount of fuel required for each cylinder. Features • 1.5 Maximum Error Over

OPERATING OVERVIEW INTEGRATED PRESSURE SENSOR 0 to 250 kPa (0 to 36.3 psi) 0.2 to 4.91 Volts Output

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated The MPX4250D series piezoresistive transducer is a state–of–the–art monolithic silicon pressure sensor designed for a wide range of applications, but particularly those employing a microcontrolle

OPERATING OVERVIEW INTEGRATED PRESSURE SENSOR 0 to 250 kPa (0 to 36.3 psi) 0.2 to 4.91 Volts Output

Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated The MPX4250D series piezoresistive transducer is a state–of–the–art monolithic silicon pressure sensor designed for a wide range of applications, but particularly those employing a microcontrolle