Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 203 P) and of 880 nm (SFH 203 PFA) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package Applications ● Industrial electronics ● For control and drive circuits ● Photointerrupters ● Fiber

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 217) and of 880 nm (SFH 217 F) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package Applications ● Industrial electronics ● For control and drive circuits ● Light reflecting switches for ste

OSRAM Radial T1 3/4, SFH 203 PFA

PIN 硅光电二极管

Silicon PIN Photodiode with Very Short Switching Time

● Especially suitable for applications from 400 nm to 1100 nm (SFH 203 P) and of 880 nm (SFH 203 PFA)\n● Short switching time (typ. 5 ns)\n● 5 mm LED plastic packageApplications\n● Industrial electronics\n● For control and drive circuits\n● Photointerrupters\n● Fiber optic transmission systems;

Silicon PIN Photodiode

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P-channel enhancement mode MOS transistor

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Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.