Silicon PIN Photodiode

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Wavelength range (S10) 750 nm to 1100 nm - Short switching time (typ. 5 ns) - 5 mm LED plastic package 

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 2030) and of 880 nm (SFH 2030 F) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package ● Also available on tape Applications ● Industrial electronics ● For control and drive circu

Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 2030) and of 880 nm (SFH 2030 F) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package ● Also available on tape Applications ● Industrial electronics ● For control and drive circu

OSRAM Radial T1 3/4, SFH 203 FA

PIN 硅光电二极管

Silicon PIN Photodiode Version 1.3

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Silicon PIN Photodiode

Features - Package: black epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Wavelength range (S10) 750 nm to 1100 nm - Short switching time (typ. 5 ns) - 5 mm LED plastic package 

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.