16.0 Amperes Insulated Common Anode Super Fast Recovery Rectifiers

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16.0 Amperes Insulated Pkg Common Anode Super Fast Recovery Rectifiers

Features  Low forward voltage drop  ThinkiSemi FRD superfast switching for high efficiency  High current capability  High surge current capability  Low reverse leakage current Application  Automotive Inverters and Solar Inverters  Plating Power Supply,SMPS and UPS  Car Audio Ampli

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

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PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages