N-Channel MOSFET

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N-Channel MOSFET

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N-Channel 60-V (D-S) MOSFET

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N-Channel MOSFET

N-Channel MOSFET

SFD30N06BT 采用稳先微电子先进的高密度沟槽技术制造，低导通电阻，高雪崩击穿耐量，可广泛应用于电工工具，锂电保护，PD快充和直流无刷电机等应用。 • 60V, 24A\n• 超低的栅极电荷\n• 杰出的 CdV/dt 特性;

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

60V N-Channel MOSFET

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60V N-Channel MOSFET

文件：663.34 Kbytes Page：9 Pages