| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER MOSFET Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF |   | ||
P-CHANNEL POWER MOSFETs FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability | Samsung 三星 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：277.52 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
isc N-Channel MOSFET Transistor 文件：280.77 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
95+ |
TO-263 |
723 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IR |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
SILICONIXVISHAY |
24+ |
NA |
488 |
原装现货,专业配单专家 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
IR |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
IR/VISHAY |
25+ |
TO-220 |
45000 |
IR/VISHAY全新现货IRF9Z24NPBF即刻询购立享优惠#长期有排单订 |
|||
IR |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
1836+ |
TO-220 |
9852 |
只做原装正品现货!或订货假一赔十! |
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2022-10-8SEN-17372 传感器分线板
分线板具有 Qwiic 连接器和标头引脚，可集成到试验板上进行开发
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