| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER MOSFET Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF |   | ||
P-CHANNEL POWER MOSFETs FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability | Samsung 三星 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：277.52 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：280.77 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
25+ |
20000 |
原装现货,可追溯原厂渠道 |
||||
INFINEON |
2136 |
TO-220 |
45400 |
全新原装公司现货
|
|||
IR |
新 |
进口原装 |
3000 |
库存现货 |
|||
IR |
2021+ |
D2-PAK |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
1442+ |
D2-PAK |
16515 |
||||
INFINEON |
24+ |
TO-220 |
28000 |
原装现正品可看现货 |
|||
INFINEON/英飞凌 |
17+ |
TO-220 |
1174 |
原装现货 |
|||
IR |
23+ |
TO-220 |
65400 |
||||
INFINEON |
22+ |
33600 |
华南区总代 |
||||
IR(国际整流器) |
24+ |
N/A |
73048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
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