| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SDR9510N | 50 A, 1 kV Ultrafast Recovery Rectifier • Ultrafast Recovery: 100 nsec Typical\n• High Surge Rating\n• Low Reverse Leakage Current\n• Low Junction Capacitance\n• Hermetically Sealed Package\n• Faster Recovery Times Available – Contact Factory\n• TX, TXV, Space Level Screening Available - Consult Factory; | SSDI |   | |
SDR9510N | 50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | |
SDR9510N | 50 AMP 800 -1100 VOLTS 80 nsec ULTRA FAST RECTIFIER 文件：228.99 Kbytes Page：2 Pages | SSDI | | |
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
50 AMP 800 -1200 Volts 100 nsec Ultrafast Recovery Rectifier 文件：106.93 Kbytes Page：3 Pages | SSDI | | ||
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r | INTERSIL | | ||
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
| IRF | | ||
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
| IRF | | ||
Advanced Power MOSFET FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Operating Temperature ● Extended Safe Operating Area ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.) | FAIRCHILD 仙童半导体 | | ||
Advanced Power MOSFET 文件：229.69 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | |
SDR9510N产品属性
- 类型
描述
- Io [A]：
50.00
- trr [nsec]：
150
- Ifsm [A]：
500
- Vf typ [V]：
1.25
- Vf max [V]：
1.70
- Ir typ [µA]：
50.00
- Ir max [µA]：
100.00
- BVr min [V]：
N/A
- Package：
TO-258
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BOURNS |
25+ |
SMD,2.8x3mm |
22360 |
样件支持,可原厂排单订货! |
|||
Bourns |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
BOURNS |
25+ |
SMD |
20000 |
原装 |
|||
BOURNS/伯恩斯 |
2223+ |
SMD |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
26+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
BOURNS |
23+ |
SMD |
16000 |
全新原装正品现货,支持订货 |
|||
Bourns Inc. |
25+ |
非标准 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
BOURNS/伯恩斯 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
3M |
2022+ |
1 |
全新原装 货期两周 |
||||
BOURNS/伯恩斯 |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
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DdatasheetPDF页码索引
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