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型号 功能描述 生产厂家 企业 LOGO 操作
SDR904

30 A, 400 V Ultrafast Recovery Rectifier

• Ultrafast Recovery: 50 nsec Maximum\n• Low Reverse Leakage\n• Hermetically Sealed\n• High Surge Current\n• Single Chip Construction\n• Available in Isolated Package\n• For High Efficiency Applications\n• TX, TXV, and S-Level Screening Available – Contact Factory;

SSDI

SDR904

30 AMP 50-500 VOLTS 50 nsec ULTRA FAST RECTIFIER

文件:202.2 Kbytes Page:2 Pages

SSDI

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

PHILIPS

飞利浦

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

PHILIPS

飞利浦

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability

PHILIPS

飞利浦

1:6 PCI CLOCK GENERATOR/ FANOUT BUFFER

The MPC903, MPC904 and MPC905 are six output clock generation devices targeted to provide the clocks required in a 3.3V or 5.0V PCI environment. The device operates from a 3.3V supply and can interface to either a TTL input or an external crystal. The inputs to the device can be driven with 5.0V w

MOTOROLA

摩托罗拉

Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.

NTE

SDR904产品属性

  • 类型

    描述

  • Io [A]:

    30.00

  • trr [nsec]:

    50

  • Ifsm [A]:

    350

  • Vf typ [V]:

    N/A

  • Vf max [V]:

    1.45

  • Ir typ [µA]:

    N/A

  • Ir max [µA]:

    50.00

  • BVr min [V]:

    N/A

  • Package:

    DO-5

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