| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SDR904 | 30 A, 400 V Ultrafast Recovery Rectifier • Ultrafast Recovery: 50 nsec Maximum\n• Low Reverse Leakage\n• Hermetically Sealed\n• High Surge Current\n• Single Chip Construction\n• Available in Isolated Package\n• For High Efficiency Applications\n• TX, TXV, and S-Level Screening Available – Contact Factory; | SSDI | ||
SDR904 | 30 AMP 50-500 VOLTS 50 nsec ULTRA FAST RECTIFIER 文件:202.2 Kbytes Page:2 Pages | SSDI | ||
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES | PHILIPS 飞利浦 | |||
N-channel dual gate MOS-FETs DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES | PHILIPS 飞利浦 | |||
CATV amplifier module DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability | PHILIPS 飞利浦 | |||
1:6 PCI CLOCK GENERATOR/ FANOUT BUFFER The MPC903, MPC904 and MPC905 are six output clock generation devices targeted to provide the clocks required in a 3.3V or 5.0V PCI environment. The device operates from a 3.3V supply and can interface to either a TTL input or an external crystal. The inputs to the device can be driven with 5.0V w | MOTOROLA 摩托罗拉 | |||
Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair) Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. | NTE |
SDR904产品属性
- 类型
描述
- Io [A]:
30.00
- trr [nsec]:
50
- Ifsm [A]:
350
- Vf typ [V]:
N/A
- Vf max [V]:
1.45
- Ir typ [µA]:
N/A
- Ir max [µA]:
50.00
- BVr min [V]:
N/A
- Package:
DO-5
SDR904规格书下载地址
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DdatasheetPDF页码索引
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