HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

30W 28V HF至1GHz LDMOS晶体管

The SD57030 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It i • In compliance with the 2002/95/EC european directive \n• Excellent thermal stability \n• POUT30W with 13dB gain @ 945MHz \n• Common source configuration \n• Internal input matching \n• BeO free package;

RF POWER TRANSISTORS The LdmoST FAMILY

文件：262.07 Kbytes Page：7 Pages

封装/外壳：M243 包装：托盘 描述：FET RF 65V 945MHZ M243 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS The LdmoSTFAMILY

DESCRIPTION The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common sour

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

30W 28V HF至1GHz LDMOS晶体管，无法兰封装

The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28 V • EXCELLENT THERMAL STABILITY \n• POUT = 30 W WITH 13 dB gain @ 945 MHz \n• COMMON SOURCE CONFIGURATION \n• BeO FREE PACKAGE;

封装/外壳：M250 包装：托盘 描述：FET RF 65V 945MHZ M250 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes Page：4 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes Page：4 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes Page：4 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes Page：4 Pages