RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION

DESCRIPTION The SD4590 is designed for both analog and digital cellular base stations over the 800 to 960 MHz frequency range, specifically those systems requiring the high linearity and efficiency afforded by class AB operation. Integrated input/output pre-matching simplifies amplifier design. R

RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION

DESCRIPTION The SD4590 is designed for both analog and digital cellular base stations over the 800 to 960 MHz frequency range, specifically those systems requiring the high linearity and efficiency afforded by class AB operation. Integrated input/output pre-matching simplifies amplifier design. R

RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION

Trans GP BJT NPN 28V 25A 5-Pin Case M-208

HIGH VOLTAGE VIDEO AMPLIFIERS

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Intended for video output stages in black-and-white and in colour television receivers.

丝印代码：459；450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR

Summary V(BR)CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in hi

N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch

N–Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch