Silicon Schottky Barrier Diodes for general purpose applications

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and co

SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Lead Free Finish, RoHS Compliant (Note 2)

Small Signal Schottky Diodes

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Reverse Recovery Time • Low Reverse Capacitance • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

Si-Schottky-Barrier Diodes

◇ Nominal current 15 mA ◇ Repetitive peak reverse voltage 40...60 V ◇ Glass case DO-35 ◇ Weight approx. 0.04g ◇ Equivalent SMD version LL101A...LL101C ◇ Standard packaging taped in ammo pack

small single schottky diodes

Features ● Low Reverse Recovery Time ● Low Reverse Capacitance ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection

Schottky Diodes

FEATURES ♦ For general purpose applications. ♦ The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes fo

Small Signal Schottky Diodes

Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 defin

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasi

Small Signal Switching Diodes

VOLTAGE RANGE: 60 - 40 V POWER DIDDIPATION: 400 mW Features ◇ For general purpose applications ◇ The low forward voltage drop and fast switching marking it ideal for protection of MOS devices,steering, biasing and couping diodes for fast switching and low logic level applications.

SMALL SINGAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling d

2.0A Axial Leaded Schottky Barrier Diodes

Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes

Small Signal Schottky Diodes

FEATURES • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • HF-detector • Protection c

SCHOTTKY BARRIER RECTIFIER DIODES

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0.03A,50V,Leaded Small Signal Schottky Diodes

SCHOTTKY BARRIER DIODES

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Small Signal Schottky Diodes

Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 defin

Small Signal Schottky Diodes

Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 defin

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2 and 3)

Small Signal Schottky Diodes

Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • The SD101 series is a Metal-on-silicon Schottky barrier d

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material – UL Recognition Flammability Classification 94V-O

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2 and 3)

SCHOTTKY BARRIER DIODE

[Micro Electronic Instrument Inc.] VOLTAGE RANGE 40 To 60 Volts CURRENT 15 mA FEATURES • Fast Switching speed • Low forward voltage • Low capacitance • Guard ring for transient and ESD protection • Also available in the DO-35 package as SD101A and Mini-MELF as LL101A

Schottky Barrier Diode

FEATURES • Low Forward Voltage Drop. • Guard Ring Construction For Transient Protection. • Negligible Reverse Recovery Time. APPLICATIONS • Schotty barrier switching.

Schottky Barrier Switching Diode

FEATURES - Low forward voltage drop - Guard ring construction for transient protection - Negligible reverse recovery time - Packing code with suffix G means green compound (halogen-free)

Surface Mount Schottky Barrier Diodes

Surface Mount Schottky Barrier Diodes Features: * Low Forward Voltage * Guard Ring Construction for Transient protection * Negligible Reverse Recovery Time

Small Signal Schottky Diodes

Features • For general purpose applications • The SD101AW to SD101CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction Guard ring. • Low Forward Voltage Drop • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering infor

SCHOTTKY DIODES

FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time

Plastic-Encapsulate Schottky Diodes

FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time

SCHOTTKY DIODES

FEATURES ♦ Low forward voltage drop ♦ Guard ring construction for transient protection ♦ Negligible reverse recovery time MECHANICAL DATA Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case

Schottky Barrier Diode

FEATURES ♦ Low forward voltage drop ♦ Guard ring construction for transient protection ♦ Negligible reverse recovery time

SCHOTTKY BARRIER DIODE

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Capacitance Ultra-small Surface Mount Package

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

Small Signal Schottky Diodes

FEATRUES • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • The SD101 series is a metal-on-silicon Schottky barrier dev

Small Signal Schottky Diodes

Features • For general purpose applications • The SD101AW to SD101CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction Guard ring. • Low Forward Voltage Drop • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering infor

SCHOTTKY BARRIER DIODE

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Capacitance Ultra-small Surface Mount Package

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2 and 3)

Small Signal Schottky Diodes

Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • The SD101 series is a Metal-on-silicon Schottky barrier d

Small Signal Schottky Diodes

Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • The SD101 series is a Metal-on-silicon Schottky barrier d

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material – UL Recognition Flammability Classification 94V-O

Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time ● Low reverse capacitance ● Ultra-small surface mount package APPLICATIONS ● Schotty barrier switching.

Small signal schottky diodes

Features ● Low Reverse Recovery Time ● Low Reverse Capacitance ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection

SURFACE MOUNT SCHOTTKY BARRIER

VOLTAGE 40 to 60 Volts CURRENT 0.35 Amperes FEATURES • Very Low VF : 0.41V (Typ) at IF=1mA • Low Capacitance : 2pF (Typ) at VR=1V • Extremely Fast Switching Speed • In compliance with EU RoHS 2002/95/EC directives

Surface Mount Schottky Barrier Diodes

Features: * Low Forward Voltage * Guard Ring Construction for Transient Protection * Negligible Reverse Recovery Time * Low Capacitance * Schottky Barrier Diodes Encapsulated in a SOD-323 Package

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling di

SCHOTTKY DIODES

FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance ● Ultra-small Surface Mount Package

SCHOTTKY DIODES

FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time