SD101BWS价格
参考价格:¥0.1916
型号:SD101BWS-7-F 品牌:Diodes 备注:这里有SD101BWS多少钱,2026年最近7天走势,今日出价,今日竞价,SD101BWS批发/采购报价,SD101BWS行情走势销售排行榜,SD101BWS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SD101BWS | For general purpose applications FEATURES • For general purpose applications • The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and couplin | VISHAYVishay Siliconix 威世威世科技公司 | ||
SD101BWS | Small Signal Schottky Diodes FEATURES • For general purpose applications • The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for | VISHAYVishay Siliconix 威世威世科技公司 | ||
SD101BWS | SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Low Capacitance • Ultra-small Surface Mount Package • Lead Free/RoHS Compliant Version • “Green” Device | DIODES 美台半导体 | ||
SD101BWS | Small Signal Schottky Diodes Features ● Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) ● Low Reverse Recovery Time ● Low Reverse Capacitance ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Halogen free available upon request by adding suf | MCC | ||
SD101BWS | Small Signal Schottky Diodes Features ● Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) ● Low Reverse Recovery Time ● Low Reverse Capacitance ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Halogen free available upon request by adding suf | MCC | ||
SD101BWS | Surface Mount Schottky Barrier Diodes Features: * Low Forward Voltage * Guard Ring Construction for Transient Protection * Negligible Reverse Recovery Time * Low Capacitance * Schottky Barrier Diodes Encapsulated in a SOD-323 Package | WEITRON | ||
SD101BWS | SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance ● Ultra-small Surface Mount Package | SUNMATE 森美特 | ||
SD101BWS | Schottky Barrier Diode FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time ● Low reverse capacitance ● Ultra-small surface mount package APPLICATIONS ● Schotty barrier switching. | BILIN 银河微电 | ||
SD101BWS | Small signal schottky diodes Features ● Low Reverse Recovery Time ● Low Reverse Capacitance ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection | CHENYI 商朗电子 | ||
SD101BWS | SCHOTTKY DIODES Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance ● Ultra-small Surface Mount Package | HTSEMI 金誉半导体 | ||
SD101BWS | SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling di | JINANJINGHENG 晶恒集团 | ||
SD101BWS | SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance ● Ultra-small Surface Mount Package | KEXIN 科信电子 | ||
SD101BWS | SURFACE MOUNT SCHOTTKY BARRIER VOLTAGE 40 to 60 Volts CURRENT 0.35 Amperes FEATURES • Very Low VF : 0.41V (Typ) at IF=1mA • Low Capacitance : 2pF (Typ) at VR=1V • Extremely Fast Switching Speed • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | ||
SD101BWS | 0.015AMP Surface Mount Schottky Barrier Rectifiers ● FEATURES ◾ Low forward voltage drop ◾ Guard ring construction for transient protection ◾ Negligible reverse recovery time ◾ Low reverse capacitance | SECOS 喜可士 | ||
SD101BWS | SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage | SEMTECH_ELEC 先之科半导体 | ||
SD101BWS | SCHOTTKY DIODES FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time | SY 顺烨电子 | ||
SD101BWS | SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | ||
SD101BWS | Schottky Diodes Features ◇ Low Forward Voltage Drop ◇ Guard Ring Construction for Transient Protection ◇ Negligible Reverse Recovery Time ◇ Low Capacitance ◇ Ultra-small Surface Mount Package | LUGUANG 鲁光电子 | ||
SD101BWS | SCHOTTKY DIODES FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time | SHUNYE 顺烨电子 | ||
SD101BWS | SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Capacitance Ultra-small Surface Mount Package | SHUNYE 顺烨电子 | ||
SD101BWS | SCHOTTKY DIODES FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance ● Ultra-small Surface Mount Package | WINNERJOIN 永而佳 | ||
SD101BWS | SCHOTTKY DIODES FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time | CHENDA 辰达半导体 | ||
SD101BWS | SCHOTTKY DIODES FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time | CHENDA 辰达半导体 | ||
SD101BWS | Schottky Barrier Diode FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time ● Low reverse capacitance ● Ultra-small surface mount package APPLICATIONS ● Schotty barrier switching. | DSK | ||
SD101BWS | Low Forward Voltage Drop FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance ● Ultra-small Surface Mount Package | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
SD101BWS | 丝印代码:S2;Surface Mount Schottky Barrier Diodes Features • Low forward voltage • Low reverse capacitance | GWSEMI 唯圣电子 | ||
SD101BWS | 丝印代码:S2;SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Capacitance Ultra-small Surface Mount Package | SY 顺烨电子 | ||
SD101BWS | SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material – UL Recognition Flammability Classification 94V-O | WTE Won-Top Electronics | ||
SD101BWS | 50V Schottky diode 文件:641.871 Kbytes Page:3 Pages | |||
SD101BWS | 50V Detection switch tube 文件:641.871 Kbytes Page:3 Pages | |||
SD101BWS | SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件:645.351 Kbytes Page:3 Pages | |||
SD101BWS | SCHOTTKY BARRIER DIODE 文件:631.49 Kbytes Page:4 Pages | JIANGSU 长电科技 | ||
SD101BWS | 丝印代码:S2;Schottky Barrier Diode 文件:195.56 Kbytes Page:3 Pages | BILIN 银河微电 | ||
SD101BWS | SCHOTTKY DIODES 文件:52.14 Kbytes Page:3 Pages | RECTRON 丽正 | ||
SD101BWS | Small Signal Schottky Diodes 文件:223.61 Kbytes Page:3 Pages | MCC | ||
SD101BWS | SCHOTTKY BARRIER DIODES 文件:95.76 Kbytes Page:2 Pages | EIC | ||
SD101BWS | 肖特基二极管 | CHINABASE 创基电子 | ||
SD101BWS | 小信号肖特基二极管 | MCC | ||
SD101BWS | 肖特基二极管 | JSCJ 长晶科技 | ||
SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Capacitance Ultra-small Surface Mount Package | SY 顺烨电子 | |||
For general purpose applications FEATURES • For general purpose applications • The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fas | VISHAYVishay Siliconix 威世威世科技公司 | |||
Small Signal Schottky Diodes FEATURES • For general purpose applications • The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for | VISHAYVishay Siliconix 威世威世科技公司 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material – UL Recognition Flammability Classification 94V-O | WTE Won-Top Electronics | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0 | WTE Won-Top Electronics | |||
Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fa | VISHAYVishay Siliconix 威世威世科技公司 | |||
Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fa | VISHAYVishay Siliconix 威世威世科技公司 | |||
Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fa | VISHAYVishay Siliconix 威世威世科技公司 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件:74.68 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件:81.96 Kbytes Page:4 Pages | DIODES 美台半导体 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件:83.44 Kbytes Page:4 Pages | DIODES 美台半导体 | |||
封装/外壳:SC-76,SOD-323 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 50V 15MA SOD323 分立半导体产品 二极管 - 整流器 - 单 | DIODES 美台半导体 | |||
封装/外壳:SC-76,SOD-323 包装:卷带(TR) 描述:DIODE SCHOTTKY 150MW 50V SOD323 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | ||
Small Signal Schottky Diodes 文件:81 Kbytes Page:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Small Signal Schottky Diodes 文件:78.08 Kbytes Page:4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V) Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS | MOSPEC 统懋 | |||
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc | MOTOROLA 摩托罗拉 | |||
WIDE BAND AMPLIFIER CHIPS DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the | NEC 瑞萨 | |||
Operational Amplifiers 文件:509.25 Kbytes Page:17 Pages | NSC 国半 | |||
Operational Amplifiers 文件:509.25 Kbytes Page:17 Pages | NSC 国半 |
SD101BWS产品属性
- 类型
描述
- Compliance (Only Automotive supports PPAP):
Standard
- Configuration:
Single
- Power Rating (µW):
400 mW
- Peak RepetitiveReverse VoltageVRRM (V):
40 V
- Forward Continuous Current IFM (mA):
15 mA
- Forward Voltage Drop VF (V):
0.4
- @ IF (A):
1 mA
- Maximum ReverseCurrent IR (µA):
0.2 µA
- @ VR (V):
40 V
- Capacitance CTOT Typ (pF):
N/A pF
- Packages:
SOD323
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES(美台) |
25+ |
SOD-323 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES(美台) |
25+ |
SOD-323 |
6843 |
样件支持,可原厂排单订货! |
|||
DIODES |
2016+ |
SOD323 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
CJ/长电 |
20+ |
SOD-323 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
CJ/长晶 |
2450+ |
SOD323 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
CJ/长电 |
SOD-323 |
85000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SOD-323 |
25+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
扬杰科技 |
21+ |
SOD-323 |
320 |
只做原装鄙视假货15118075546 |
|||
DIODES/美台 |
26+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
DIODES |
25+ |
SOT323 |
27000 |
原厂原装,价格优势 |
SD101BWS规格书下载地址
SD101BWS参数引脚图相关
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- SD-102
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- SD101CW-GS08
- SD101CW-E3-08
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- SD101BW-TP
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- SD101BWS-7-F
- SD101BW-E3-08
- SD101BW-7-F
- SD101BW-7
- SD101BW
- SD101B-TR
- SD101BL
- SD101B
- SD101AW-TP
- SD101AWS-TP
- SD101AWS-E3-08
- SD101AWS-7-F-CUTTAPE
- SD101AWS-7-F
- SD101AWS-7
- SD101AW-E3-08
- SD101AW-7-F/BKN
- SD101AW-7-F
- SD101AW
- SD101A-TR
- SD101AL
- SD101A_
- SD101A
- SD1019
- SD1018
- SD1016
- SD1015-06
- SD1015
- SD1014
- SD1013-03
- SD1013
- SD101201
- SD1012
- SD-1011
- SD1010D
- SD1010A
- SD10100
- SD-1010
- SD1010
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