High voltage DC-DC converters

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碳化硅功率MOSFET，1200 V、65 A、59 mOhm（典型值，TJ = 150 C），HiP247封装

SiC N-Channel MOSFET

FEATURES ·High blocking voltagewith low RDS(on) ·Easy to parallel and simple to drive ·Avalanche ruggedness APPLICATIONS ·Solar Inverters ·Industrial UPS ·Battery chargers ·Motor drives

IGBT with Reverse Blocking capability

Features ● IGBT with NPT (non punch through) structure ● reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery ● positive temperature coefficient of saturation vol

IGBT

Features 1200V,50A VCE(sat)(typ.)=2.1V@VGE=15V,IC=50A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heati

SiC Power MOSFET

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Kelvin Source gate connection

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