碳化硅功率MOSFET：20 A、1700 V、189 mOhm（典型值，Tj = 150 C），N沟道，HiP247封装

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 64mΩ（TYP.）@VGS= 20V ·High Speed Switching with Low Capacitance ·Avalanche Ruggedness APPLICATIONS ·Motor Drives ·Solar Inverters, UPS ·Down Hole Drilling ·Battery Chargers

Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package

N-Channel Enhancement Mode MOSFET

Features: ■ Low rDS(on) ■ Ultra Low Gate Charge ■ High dv/dt Capability ■ High Unclamped Inductive Switching (UIS) Capability ■ High Peak Current Capability ■ Increased Transconductance Performance ■ Optimized Design For High Performance Power Systems

N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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