封装/外壳：径向，Can 包装：散装 描述：CAP FILM 5UF 10% 1KVPK RADIAL 电容器 薄膜电容器

纸介质电容

Commutating Capacitors Film-Paper/Extended Foil Commutating Capacitor

Type SCRN Film-Paper/Extended Foil Commutating Capacitor Type SCRN capacitors are for SCR (silicon controlled rectifier) commutating applications that require high peak and rms current capability. These capacitors are ideal for other high frequency and pulsed applications. The SCRN is supplied in

Type SCRN Film-Paper/Extended Foil Commutating Capacitor

Type SCRN Film-Paper/Extended Foil Commutating Capacitor Type SCRN capacitors are for SCR (silicon controlled rectifier) commutating applications that require high peak and rms current capability. These capacitors are ideal for other high frequency and pulsed applications. The SCRN is supplied in

封装/外壳：径向，Can 包装：散装 描述：CAP FILM 5UF 10% 1KVPK RADIAL 电容器 薄膜电容器

FILM, PAPER-FILM CAPACITORS

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)