4A EcoSpeedTM Synchronous Step-Down Regulator with Optional Ultrasonic Power Save

Description The SC174 is an integrated, synchronous 4A EcoSpeedTM step-down regulator, which incorporates Semtech’s advanced, patented adaptive on-time architecture to achieve best-in-class performance in dynamic point-ofload applications. The input voltage range is 3V to 5.5V with a programmable

4A EcoSpeed™ Synchronous Step-Down Regulator with Optional Ultrasonic Power Save

The SC174 is an integrated, synchronous 4A EcoSpeed™ step-down regulator, which incorporates Semtech’s advanced, patented adaptive on-time architecture to achieve best-in-class performance in dynamic point-of load applications. ·VIN: 3V to 5.5V\n·VOUT: 0.75V to 95% x VIN\n·IOUT: Up to 4A\n·Low RDS(ON) Switches·Up to 95% Peak Efficiency\n\n·High Output Accuracy\n·Small Ceramic Capacitors\n·Power Good Pin (Open-Drain)\n·Patented Adaptive On-Time Control:·Excellent Transient Response\n·Programmable Pseudo-fixed Freque;

4A EcoSpeedTM Synchronous Step-Down Regulator with Optional Ultrasonic Power Save

Description The SC174 is an integrated, synchronous 4A EcoSpeedTM step-down regulator, which incorporates Semtech’s advanced, patented adaptive on-time architecture to achieve best-in-class performance in dynamic point-ofload applications. The input voltage range is 3V to 5.5V with a programmable

4A EcoSpeedTM Synchronous Step-Down Regulator with Optional Ultrasonic Power Save

Description The SC174 is an integrated, synchronous 4A EcoSpeedTM step-down regulator, which incorporates Semtech’s advanced, patented adaptive on-time architecture to achieve best-in-class performance in dynamic point-ofload applications. The input voltage range is 3V to 5.5V with a programmable

封装/外壳：10-VFDFN 裸露焊盘 功能：降压 包装：管件 描述：IC REG BUCK ADJUSTABLE 4A 10MLPD 集成电路（IC） 稳压器 - DC-DC 开关稳压器

封装/外壳：10-VFDFN 裸露焊盘 功能：降压 包装：管件 描述：IC REG BUCK ADJUSTABLE 4A 10MLPD 集成电路（IC） DC DC 开关稳压器

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

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DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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DESCRIPTION The µPG174TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 35 mA low current operation. It is housed in a very small 6-pin minimold package available on t