Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：DIODE SCHOTTKY 35V 10A DPAK 分立半导体产品 二极管 - 整流器 - 阵列

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 35V 10A DPAK 分立半导体产品 二极管 - 整流器 - 阵列

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. FEATURES: • Input matching • Emitter site Ballasted. • PG = 10 dB at 35 W/1150 MHz • Omnigold™ Metalization System

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81035M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035M. MSC81035M offers improved saturated ouput power and collector efficiency based on the test circuit described herein.

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP of fers improved saturated ouput power and collector efficiency based on the test circuit described he