SBR8价格
参考价格：￥0.8077
型号：SBR80520LT1G 品牌：ON 备注：这里有SBR8多少钱，2026年最近7天走势，今日出价，今日竞价，SBR8批发/采购报价，SBR8行情走势销售排行榜，SBR8报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SBR8 | Standard Recovery, PCB Mounting, 1-Phase Full Wave Bridge Rectifier Assemblies | SEMTECH 先之科 |   | |
SBR8 | STANDARD RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS 文件：69.23 Kbytes Page：2 Pages | SEMTECH 先之科 | | |
SCHOTTKY RECTIFIER Schottky Rectifier 80 A Avg; VRRM up to 50 Volts ■ Guard ring reverse protection ■ 50 Volts VRRM / VRWM ■ 80 Amperes ■ 175 ° (Tj) | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SCHOTTKY RECTIFIER Schottky Rectifier 80 A Avg; VRRM up to 50 Volts ■ Guard ring reverse protection ■ 50 Volts VRRM / VRWM ■ 80 Amperes ■ 175 ° (Tj) | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SCHOTTKY RECTIFIER Schottky Rectifier 80 A Avg; VRRM up to 50 Volts ■ Guard ring reverse protection ■ 50 Volts VRRM / VRWM ■ 80 Amperes ■ 175 ° (Tj) | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
80 Amp Schottky Rectifier • Schottky Barrier Rectifier • 175 °C Junction Temperature • Guard Ring Protection • Reverse Energy Tested • VRRM - 40 to 50 Volts • 80 Amperes | MICROSEMI 美高森美 | | ||
Si Schottky Rectifier Diodes 80Amp,40V-50V Schottky Rectifier in DO5 package. | MICROCHIP 微芯科技 | | ||
80 Amp Schottky Rectifier • Schottky Barrier Rectifier • 175 °C Junction Temperature • Guard Ring Protection • Reverse Energy Tested • VRRM - 40 to 50 Volts • 80 Amperes | MICROSEMI 美高森美 | | ||
SCHOTTKY RECTIFIER Schottky Rectifier 80 A Avg; VRRM up to 50 Volts ■ Guard ring reverse protection ■ 50 Volts VRRM / VRWM ■ 80 Amperes ■ 175 ° (Tj) | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SCHOTTKY RECTIFIER Schottky Rectifier 80 A Avg; VRRM up to 50 Volts ■ Guard ring reverse protection ■ 50 Volts VRRM / VRWM ■ 80 Amperes ■ 175 ° (Tj) | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
80 Amp Schottky Rectifier • Schottky Barrier Rectifier • 175 °C Junction Temperature • Guard Ring Protection • Reverse Energy Tested • VRRM - 40 to 50 Volts • 80 Amperes | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • VRRM - 60 Volts • Reverse Energy Tested • 175 °C Junction Temperature • 80 Amperes | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • VRRM - 60 Volts • Reverse Energy Tested • 175 °C Junction Temperature • 80 Amperes | MICROSEMI 美高森美 | | ||
Schottky ORing Diode 80 Amp Schottky Rectifier • Schottky Barrier Rectifier • Low Forward Voltage • Guard Ring protection • 150 °C Junction Temperature • VRRM - 10 to 15 Volts | MICROSEMI 美高森美 | | ||
Schottky ORing Diode 80 Amp Schottky Rectifier • Schottky Barrier Rectifier • Low Forward Voltage • Guard Ring protection • 150 °C Junction Temperature • VRRM - 10 to 15 Volts | MICROSEMI 美高森美 | | ||
8A SBR® SUPER BARRIER RECTIFIER POWERDI® Features Designed as Bypass Diodes for Solar Panels Selectively Rated for +200°C Maximum Junction Temperature for High Thermal Reliability Patented Super Barrier Rectifier Technology Low Forward Voltage Drop Excellent High Temperature Stability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) | DIODES 美台半导体 | | ||
丝印代码：S8A45S；8A SBR® SUPER BARRIER RECTIFIER POWERDI® Features Designed as Bypass Diodes for Solar Panels Selectively Rated for +200°C Maximum Junction Temperature for High Thermal Reliability Patented Super Barrier Rectifier Technology Low Forward Voltage Drop Excellent High Temperature Stability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) | DIODES 美台半导体 | | ||
8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Interlocking Clip Design for High Surge Current Capacity Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability +175°C Operating Junction Temperature Lead-Free Finish; RoHS Compliant (Notes | DIODES 美台半导体 | | ||
丝印代码：S8A60；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Interlocking Clip Design for High Surge Current Capacity Patented Super Barrier Rectifier Technology Soft, Fast Switching Capability +175°C Operating Junction Temperature Lead-Free Finish; RoHS Compliant (Notes | DIODES 美台半导体 | | ||
8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
丝印代码：S8E45；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
丝印代码：S8E45；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
丝印代码：S8E45；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
丝印代码：S8E45；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
丝印代码：S8E60；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
丝印代码：S8E60；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
丝印代码：S8E60；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
丝印代码：S8E60；8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features Ultra Low Forward Voltage Drop (VF) Helps Minimize Power Losses Excellent Reverse Leakage (IR) Stability at Higher Temperatures Thermally Efficient Package for Cooler Running Applications Less Than 1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (No | DIODES 美台半导体 | | ||
8A SBR SUPER BARRIER RECTIFIER PowerDI Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR® Technology Soft, Fast Switching Capability +175°C Operating Junction Temperature Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Fo | DIODES 美台半导体 | | ||
丝印代码：S8M100；8A SBR SUPER BARRIER RECTIFIER PowerDI Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR® Technology Soft, Fast Switching Capability +175°C Operating Junction Temperature Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Fo | DIODES 美台半导体 | | ||
丝印代码：S8M100；8A SBR SUPER BARRIER RECTIFIER PowerDI Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR® Technology Soft, Fast Switching Capability +175°C Operating Junction Temperature Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Fo | DIODES 美台半导体 | | ||
SBR8M100P5Q SUPER BARRIER RECTIFIER PowerDI5 Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR® Technology Soft, Fast Switching Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The SBR8M100P5Q is suitable for automotiv | DIODES 美台半导体 | | ||
丝印代码：S8M100；SBR8M100P5Q SUPER BARRIER RECTIFIER PowerDI5 Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR® Technology Soft, Fast Switching Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The SBR8M100P5Q is suitable for automotiv | DIODES 美台半导体 | | ||
丝印代码：S8M100；SBR8M100P5Q SUPER BARRIER RECTIFIER PowerDI5 Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR® Technology Soft, Fast Switching Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The SBR8M100P5Q is suitable for automotiv | DIODES 美台半导体 | | ||
8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features 100 Avalanche Tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and reliable end applications. Reduced Ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse leak | DIODES 美台半导体 | | ||
8A SBR® SUPER BARRIER RECTIFIER POWERDI®5 Features 100 Avalanche Tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and reliable end applications. Reduced Ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse leak | DIODES 美台半导体 | | ||
8A SBR SUPER BARRIER RECTIFIER PowerDI5 Features 100 Avalanche Tested. Patented SBR ® technology provides a superior avalanche capability than Schottky diodes ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse | DIODES 美台半导体 | | ||
丝印代码：S8U60；8A SBR SUPER BARRIER RECTIFIER PowerDI5 Features 100 Avalanche Tested. Patented SBR ® technology provides a superior avalanche capability than Schottky diodes ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse | DIODES 美台半导体 | | ||
丝印代码：S8U60；8A SBR SUPER BARRIER RECTIFIER PowerDI5 Features 100 Avalanche Tested. Patented SBR ® technology provides a superior avalanche capability than Schottky diodes ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse | DIODES 美台半导体 | | ||
包装：散装 描述：POWER SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | | ||
封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | | ||
Diode Schottky 40V 80A 2-Pin DO-5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
80 Amp Schottky Rectifier 文件：140.58 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：140.58 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：140.58 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：140.58 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：140.58 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：140.58 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：140.58 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
Surface Mount Schottky Power Rectifier 文件：152.74 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：152.74 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
CURRENT 8.0 AMPERES 文件：252.93 Kbytes Page：2 Pages | DAESAN | | ||
CURRENT 8.0 AMPERES 文件：252.93 Kbytes Page：2 Pages | DAESAN | | ||
80 Amp Schottky Rectifier 文件：137.05 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：137.05 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：137.05 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：137.05 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
80 Amp Schottky Rectifier 文件：137.05 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
CURRENT 8.0 AMPERES 文件：252.93 Kbytes Page：2 Pages | DAESAN | |
SBR8产品属性
- 类型
描述
- Peak Reverse Repetitive Voltage：
40V
- Peak Reverse Current：
2000uA
- Peak Non-Repetitive Surge Current：
1200A
- Peak Forward Voltage：
0.74V
- Operating Junction Temperature：
-65 to 175°C
- Minimum Operating Temperature：
-65°C
- Maximum Operating Temperature：
175°C
- Maximum Continuous Forward Current：
80A
- Configuration：
Single
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
美国MAP |
2025+ |
5000 |
原装进口,免费送样品! |
||||
DIODES达尔 |
25+ |
POWERDI5 |
918000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
25+ |
POWERDI5X6 |
9000 |
支持任何机构检测 只做原装正品 |
|||
DIODES |
24+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
|||
DIODES |
23+ |
POWERDI5 |
4455 |
原厂原装正品 |
|||
MICROSEMI |
23+ |
DO-203AB |
3658 |
公司优势库存热卖全新原装!欢迎来电 |
|||
DIODES |
23+ |
N/A |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON(安森美) |
23+ |
SOD-123 |
9460 |
公司只做原装正品,假一赔十 |
|||
ON(安森美) |
24+ |
标准封装 |
7696 |
全新原装正品/价格优惠/质量保障 |
|||
DIODES/美台 |
25+ |
POWERDI5 |
38687 |
DIODES/美台全新特价SBR8U60P5-13即刻询购立享优惠#长期有货 |
SBR8芯片相关品牌
SBR8规格书下载地址
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SBR8数据表相关新闻
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DdatasheetPDF页码索引
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