8A LOW VF SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications • Plastic Material: UL Flammability Classification Rating 94V-0

8A LOW VF SCHOTTKY BARRIER RECTIFIER

8A LOW VF SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications • Plastic Material: UL Flammability Classification Rating 94V-0

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

LMC835 Digital Controlled Graphic Equalizer

文件：474.13 Kbytes Page：18 Pages

LMC835 Digital Controlled Graphic Equalizer

文件：474.13 Kbytes Page：18 Pages