SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 --- 100 V CURRENT: 8.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage, high frequencyinverters free wheeling, ◇ The plastic

Schottky Rectifier

FEATURES · Low Power Loss, High Efficiency · High Surge Capability · Guard Ring For Transient Protection APPLICATIONS · Low Voltage, High Frequency Inverters · Polarity Protection

Low VF Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec

封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 35V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

DIODE SCHOTTKY 35V 8A TO220AC

8.0A SCHOTTKY BARRIER RECTIFIER

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SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

LMC835 Digital Controlled Graphic Equalizer

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LMC835 Digital Controlled Graphic Equalizer

文件：474.13 Kbytes Page：18 Pages