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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
LOW VF SCHOTTKY RECTIFIER ReverseVoltage-20and25VoltsForwardCurrent-25.0Amperes FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability ♦Ve | GE GE Industrial Company |  |   | |
Dual Low VF Schottky Barrier Rectifiers ReverseVoltage20to30VoltsForwardCurrent25.0Amperes Features ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Dualrectifierconstruction,positivecentertap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,higheffi | Good-Ark Good-Ark |  | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LF maximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220ABand ITO-220ABpackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
LOW VF SCHOTTKY RECTIFIER ReverseVoltage-20and25VoltsForwardCurrent-25.0Amperes FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability ♦Ve | GE GE Industrial Company | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LF maximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220ABand ITO-220ABpackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Schottky Barrier Rectifiers ReverseVoltage20to30VoltsForwardCurrent25.0Amperes Features ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Dualrectifierconstruction,positivecentertap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,higheffi | Good-Ark Good-Ark | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
LOW VF SCHOTTKY RECTIFIER ReverseVoltage-20and25VoltsForwardCurrent-25.0Amperes FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability ♦Ve | GE GE Industrial Company | | | |
Dual Low VF Schottky Barrier Rectifiers ReverseVoltage20to30VoltsForwardCurrent25.0Amperes Features ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Dualrectifierconstruction,positivecentertap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,higheffi | Good-Ark Good-Ark | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of245°C(forD2PAK(TO-263AB)package) •Solderbathtemperature275°Cmaximum,10s,pe | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LF maximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220ABand ITO-220ABpackage) •Compo | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of245°C(forD2PAK(TO-263AB)package) •Solderbathtemperature275°Cmaximum,10s,pe | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low VF Schottky Barrier Rectifiers ReverseVoltage20to30VoltsForwardCurrent25.0Amperes Features ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Dualrectifierconstruction,positivecentertap ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,higheffi | Good-Ark Good-Ark | | | |
Dual Low VF Common Cathode Schottky Rectifier FEATURES •Powerpack •Lowpowerloss,highefficiency •Verylowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SCHOTTKY BARRIER RECTIFIER 文件：230.15 Kbytes Page：2 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | | |
SCHOTTKY BARRIER RECTIFIER 文件：230.15 Kbytes Page：2 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
SCHOTTKY BARRIER RECTIFIER 文件：249.44 Kbytes Page：2 Pages | DSK Diode Semiconductor Korea |  | | |
SCHOTTKY BARRIER RECTIFIER 文件：230.15 Kbytes Page：2 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
SCHOTTKY BARRIER RECTIFIER 文件：230.15 Kbytes Page：2 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
SCHOTTKY BARRIER RECTIFIER 文件：230.15 Kbytes Page：2 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
SCHOTTKY BARRIER RECTIFIER 文件：230.15 Kbytes Page：2 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
SCHOTTKY BARRIER RECTIFIER 文件：230.15 Kbytes Page：2 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
SCHOTTKY BARRIER RECTIFIER 文件：230.15 Kbytes Page：2 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
Dual Low VF Common Cathode Schottky Rectifier 文件：148.47 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 20V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | | |
Dual Low VF Common Cathode Schottky Rectifier 文件：148.47 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 25V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | | | |
Dual Low VF Common Cathode Schottky Rectifier 文件：148.47 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SBL25产品属性
- 类型
描述
- 型号
SBL25
- 制造商
BILIN
- 制造商全称
Galaxy Semi-Conductor Holdings Limited
- 功能描述
SCHOTTKY BARRIER RECTIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
20000 |
|||||||
VISHAY |
23+ |
TO-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
|||
VISHAY |
2023+ |
ITO-220A |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VISHAY/威世通 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原装现货 |
|||
VISHAY/威世 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
VISHAY/威世 |
2022+ |
ITO-220A |
12888 |
原厂代理 终端免费提供样品 |
|||
JINGDAO/晶导微 |
23+ |
SMB(DO-214AA) |
69820 |
终端可以免费供样,支持BOM配单! |
SBL25芯片相关品牌
SBL25规格书下载地址
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SBL25数据表相关新闻
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- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
