LOW VF SCHOTTKY RECTIFIER

Reverse Voltage - 20 and 25 Volts Forward Current - 25.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability ♦ Ve

Dual Low VF Schottky Barrier Rectifiers

Reverse Voltage 20 to 30 Volts Forward Current 25.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high effi

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Compo

Dual Low VF Common Cathode Schottky Rectifier

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Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

Dual Low VF Common Cathode Schottky Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Very low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22

封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 25V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 25V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY RECTIFIER

Reverse Voltage - 20 and 25 Volts Forward Current - 25.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability ♦ Ve