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SBL20价格
参考价格:¥3.5800
型号:SBL2040CT-E3/45 品牌:Vishay 备注:这里有SBL20多少钱,2025年最近7天走势,今日出价,今日竞价,SBL20批发/采购报价,SBL20行情走势销售排行榜,SBL20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SBL20 | Micro Fuses | ETC 知名厂家 | ETC | |
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap | LUGUANG 鲁光电子 | |||
LOW VF SCHOTTKY BARRIER RECTIFIERS Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction | SUNMATE 森美特 | |||
LOW VF SCHOTTKY BARRIER RECTIFIERS Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction | SUNMATE 森美特 | |||
LOW VF SCHOTTKY BARRIER RECTIFIERS Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction | SUNMATE 森美特 | |||
20A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | DIODES 美台半导体 | |||
SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 20.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward | GE | |||
SCHOTTKY BARRIER RECTIFIER FEATURES ▪ Schottky Barrier Chip ▪ Guard Ring Die Construction for Transient Protection ▪ Low Power Loss, High Efficiency ▪ High Surge Capability ▪ High Current Capability and Low Forward Voltage Drop ▪ For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect | WINNERJOIN 永而佳 | |||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap | LUGUANG 鲁光电子 | |||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A FEATURES ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free heeling,and polarity protection applica | DSK | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO | VishayVishay Siliconix 威世威世科技公司 | |||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
20 Amp Schottky Barrier Rectifier 30 to 45 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AB Full Molded Plastic Package | MCC | |||
20A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 | |||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop, low switching losses ◇ High surge capability ◇ For use in low voltage, high frequency inverters free wheeling, and polarity | DSK | |||
Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
20A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | DIODES 美台半导体 | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap | LUGUANG 鲁光电子 | |||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | |||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | |||
20A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 | |||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | |||
20A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | DIODES 美台半导体 | |||
SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 20.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward | GE | |||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap | LUGUANG 鲁光电子 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, | VishayVishay Siliconix 威世威世科技公司 | |||
20 Amp Schottky Barrier Rectifier 30 to 45 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AB Full Molded Plastic Package | MCC | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | |||
20A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity | DIODES 美台半导体 | |||
Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
Dual Common-Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max., 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
20A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | DIODES 美台半导体 | |||
Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | |||
20A SCHOTTKY BARRIER RECTIFIER Features • Ultra Low Forward Voltage Drop • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability | DYELEC 迪一电子 | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap | LUGUANG 鲁光电子 | |||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | |||
Schottky Barrier Rectifier FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use | ISC 无锡固电 | |||
LOW VF SCHOTTKY BARRIER RECTIFIERS Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction | SUNMATE 森美特 | |||
20A SCHOTTKY BARRIER RECTIFIER Features • Low Forward Voltage Drop • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • UL Approval in Accordance with UL 1557, Reference No. E94661 | DIODES 美台半导体 | |||
20 Amp Schottky Barrier Rectifier 30 to 45 Volts Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AB Full Molded Plastic Package | MCC |
SBL20产品属性
- 类型
描述
- 型号
SBL20
- 制造商
BILIN
- 制造商全称
Galaxy Semi-Conductor Holdings Limited
- 功能描述
SCHOTTKY BARRIER RECTIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LITEON/光宝 |
24+ |
NA/ |
4250 |
原厂直销,现货供应,账期支持! |
|||
DIODES |
2016+ |
TO-220 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
LITEON/光宝 |
25+ |
TO-220 |
32360 |
LITEON/光宝全新特价SBL2040CT即刻询购立享优惠#长期有货 |
|||
DIODES |
23+ |
TO-3P |
8000 |
专做原装正品,假一罚百! |
|||
MOSPEC |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
LT |
25+ |
TO3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
LITEON |
15+ |
TO-220 |
1661 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
JILI |
25+ |
SOT-220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
LITEON/光宝 |
13+ |
TO-220 |
1330 |
||||
LITEON |
23+ |
TO220 |
12800 |
公司只有原装 欢迎来电咨询。 |
SBL20规格书下载地址
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