| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SBL2045CT | 20A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protec | DIODES 美台半导体 | ||
SBL2045CT | Low VF Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protec | SIRECTIFIER 矽莱克电子 | ||
SBL2045CT | 20A SCHOTTKY BARRIER RECTIFIER Features • Ultra Low Forward Voltage Drop • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability | DYELEC 迪一电子 | ||
SBL2045CT | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 --- 100 V CURRENT: 20 A Features ◇ Metal-Semiconductor junction with guardring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection ap | LUGUANG 鲁光电子 | ||
SBL2045CT | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverte | JIANGSU 长电科技 | ||
SBL2045CT | Schottky Barrier Rectifier FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use | ISC 无锡固电 | ||
SBL2045CT | LOW VF SCHOTTKY BARRIER RECTIFIERS Feaures Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
SBL2045CT | 封装/外壳:TO-220-3 包装:托盘 描述:DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | ||
SBL2045CT | Schottky | DIODES 美台半导体 | ||
SBL2045CT | 20A SCHOTTKY BARRIER RECTIFIER 文件:70.12 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
SBL2045CT | SCHOTTKY BARRIER RECTIFIER 文件:242.09 Kbytes Page:2 Pages | BILIN 银河微电 | ||
SBL2045CT | 20A SCHOTTKY BARRIER RECTIFIER 文件:76.74 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
20A SCHOTTKY BARRIER RECTIFIER Features • Low Forward Voltage Drop • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • UL Approval in Accordance with UL 1557, Reference No. E94661 | DIODES 美台半导体 | |||
封装/外壳:TO-220-3 隔离片 包装:散装 描述:DIODE ARRAY SCHOTTKY 45V ITO220S 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | |||
20A SCHOTTKY BARRIER RECTIFIER 文件:192.83 Kbytes Page:4 Pages | DIODES 美台半导体 | |||
SCHOTTKY BARRIER RECTIFIER 文件:130.99 Kbytes Page:3 Pages | ZOWIE 智威 | |||
TO-220 / ITO-220 Schottky Barrier Rectifies | ZOWIE 智威 | |||
萧特基 (Schottky)(.5A 和以上) | DIODES 美台半导体 | |||
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el | PHILIPS 飞利浦 | |||
UHF power transistor DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou | PHILIPS 飞利浦 | |||
SWITCHMODE?? Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E | MOTOROLA 摩托罗拉 | |||
SWITCHMODE??Schottky Power Rectifirer SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use | MOTOROLA 摩托罗拉 | |||
SCHOTTKY BARRIER RECTIFIERS(20A,30-45V) SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara | MOSPEC 统懋 |
SBL2045CT产品属性
- 类型
描述
- Compliance (Only Automotive supports PPAP):
Standard
- Configuration:
Dual
- MaximumAverageRectifiedCurrent IO (A):
20 A
- @ TerminalTemperature TT (ºC):
95 ºC
- Peak RepetitiveReverse VoltageVRRM (V):
45 V
- Peak ForwardSurge CurrentIFSM (A):
250 A
- Forward Voltage Drop VF (V):
0.55 V
- @ IF (A):
10 A
- Maximum ReverseCurrent IR (µA):
1000 µA
- @ VR (V):
45 V
- TotalCapacitance CT (pF):
650 pF
- Packages:
TO220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Inc |
25+ |
N/A |
6843 |
样件支持,可原厂排单订货! |
|||
Diodes Inc |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
LITEON/光宝 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
LT |
25+23+ |
TO-220 |
27345 |
绝对原装正品全新进口深圳现货 |
|||
LITEON/光宝 |
13+ |
TO-220 |
1330 |
||||
DIODES/美台 |
25+ |
NA |
35000 |
只做原装正品假一赔十!正规渠道订货! |
|||
DIODES美台 |
17+ |
TO220-3 |
6200 |
||||
LITEON |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
|||
Diodes |
24+ |
TO-220AB |
646 |
||||
DIODES/美台 |
2447 |
TO220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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SBL2045CT数据表相关新闻
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www.58chip.com
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