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SBD835L

8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Very Low Forward Voltage Drop • Surge Overload Rating to 150A Peak • Plastic Material: UL Flammability Classification Rating 94V-0

DIODES

美台半导体

SBD835L

8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

DIODES

美台半导体

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. This state of the art d

MOTOROLA

摩托罗拉

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

NEC

瑞萨

LMC835 Digital Controlled Graphic Equalizer

文件:474.13 Kbytes Page:18 Pages

NSC

国半

LMC835 Digital Controlled Graphic Equalizer

文件:474.13 Kbytes Page:18 Pages

NSC

国半

SBD835L产品属性

  • 类型

    描述

  • 型号

    SBD835L

  • 制造商

    DIODES

  • 制造商全称

    Diodes Incorporated

  • 功能描述

    8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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