General Purpose Transistors

General Purpose Transistors Voltage and Current are Negative for PNP Transistors Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fr

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 45V 0.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistors

High Voltage Switching Diode

High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS Features • Pb−Free Packages are Available

Plastic-Encapsulated Diodes

SWITCHING DIODE FEATURES Power dissipation PD: 225 mW (Tamb=25℃) Forward Current IF: 200 m A Reverse Voltage VR: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

High Voltage Switching Diode

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High Voltage Switching Diode

文件：131.96 Kbytes Page：6 Pages

High Voltage Switching Diode

文件：131.96 Kbytes Page：6 Pages