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型号 功能描述 生产厂家 企业 LOGO 操作
SBC338

NPN Silicon Transistor

Descriptions •High current application •Switching application Features •Suitable for AF-Driver stage and low power output stages •Complementary pair with SBC328

AUK

SBC338

NPN Silicon Transistor

Descriptions •High current application •Switching application Features •Suitable for AF-Driver stage and low power output stages •Complementary pair with SBC328

KODENSHI

可天士

SBC338

High current application

文件:197.83 Kbytes Page:4 Pages

KODENSHI

可天士

SBC338

NPN Silicon Transistor

文件:85.83 Kbytes Page:3 Pages

AUK

SBC338

Small Signal Transistors

AUK

NPN Silicon Transistor

Descriptions\n•High current application\n•Switching application •Suitable for AF-Driver stage and \n•Complementary pair with SBC328;

AUK

NPN Silicon Transistor

文件:85.83 Kbytes Page:3 Pages

AUK

Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

MOTOROLA

摩托罗拉

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50 (Min) • Buil

MOTOROLA

摩托罗拉

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45 ● Intermodulation Distortion @ 20

NTE

5-Amp Adjustable Regulators

文件:396.27 Kbytes Page:16 Pages

NSC

国半

5-Amp Adjustable Regulators

文件:396.27 Kbytes Page:16 Pages

NSC

国半

SBC338产品属性

  • 类型

    描述

  • Classifacation:

    Single type

  • VCEO [V]:

    25

  • IC[mA]:

    800

  • PC[mW]:

    625

  • hFE_Min:

    100

  • hFE_Max:

    630

  • hFE@ VCE [V]:

    1

  • hFE@ IC[mA]:

    100

  • VCE(sat) [V]_Max:

    0.7

  • VCE(sat) [V]@ IC[mA]:

    500

  • VCE(sat) [V]@ IB[mA]:

    50

  • fT[MHz]_Typ:

    100

  • fT[MHz]@ VCE [V]:

    5

  • fT[MHz]@ IC[mA]:

    10

更新时间:2026-8-2 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MIS
24+
原厂封装
8000
原装现货假一罚十

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