Amplifier Transistors(PNP)

PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

PNP Silicon AF Transistors ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 (NPN)

Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) (1) Taped in ammo pack 4000 (Raster 2.54) (2) On reque

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.625Watts of Power Dissipation. • Collector-current : -0.8A • Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) • Epoxy meets UL 94 V-0 flammability rating •

PNP Plastic-Encapsulate Transistors

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