SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 8.0 Amperes FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency

8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

肖特基二极管

肖特基二极管

SCHOTTKY BARRIER RECTIFIERS

Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meet UL 94V-0 Classification For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Switching Power Supplies

8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak Low Power Loss, High Efficiency Fast Switching For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Switching Power Supplies

8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak Low Power Loss, High Efficiency Fast Switching For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Switching Power Supplies

8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meet UL 94V-0 Classification For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Switching Power Supplies

8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Schottky Rectifiers

8.0 A SCHOTTKY BARRIER DIODE

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8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

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Ultra fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas.

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matchin