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SB8200F

8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

WTE

Won-Top Electronics

SB8200F

Schottky Rectifiers

WTE

Won-Top Electronics

8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

WTE

Won-Top Electronics

Schottky Rectifiers

WTE

Won-Top Electronics

8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

文件:59.7 Kbytes Page:4 Pages

WTE

Won-Top Electronics

Ultra fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas.

PHILIPS

飞利浦

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

PANASONIC

松下

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matchin

MOTOROLA

摩托罗拉

SB8200F产品属性

  • 类型

    描述

  • Product Type:

    Schottky

  • Package Group:

    Powerpack

  • Package:

    ITO-220A

  • Configuration:

    Single

  • IF(AV)(A):

    8

  • VRRM(V):

    200

  • VF @ IF(V):

    0.90 @ 8.0A

  • IR @ VR(mA):

    0.2 @ 200V

  • IFSM(A):

    150

  • Compliance:

    RoHS Pb-freeHalogen-free*

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