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型号 功能描述 生产厂家 企业 LOGO 操作
SB801

BRIDGE RECTIFIERS 2.0 to 8.0 Amps

[REF INTERNATIONAL] BRIDGE RECTIFIERS 2.0 to 8.0 Amps SINGLE PHASE PLASTIC BRIDGE RECTIFIERS (INCLUDING GLASS PASSIVATED)

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SB801

Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

TSC

台湾半导体

SB801

Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

文件:69.75 Kbytes Page:2 Pages

TSC

台湾半导体

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件:69.51 Kbytes Page:2 Pages

TSC

台湾半导体

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NTE

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NEC

瑞萨

SB801产品属性

  • 类型

    描述

  • 型号

    SB801

  • 功能描述

    BRIDGE RECTIFIERS 2.0 to 8.0 Amps

更新时间:2026-8-3 16:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
3000
自己现货
HY/SEP/YJ
23+
SB-8
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
TSC
23+
方桥
80000
主营桥堆系列,真实库存

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