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型号 功能描述 生产厂家 企业 LOGO 操作
SB590

Schottky Barrier Rectifiers

Features Low forward voltage drop High average forward current Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Output Rectification in DC/DC Converters, Polarity Protection, Free-wheeling diodes Commercial grade 1) Mechanical Data 1) Taped in

DIOTEC

德欧泰克

SB590

5.0A SCHOTTKY BARRIER RECTIFIER

Features Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability Surge Overload Rating to 150A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

DIODES

美台半导体

SB590

5.0AMPS. SCHOTTKY BARRIER RECTIFIERS

FEATURE • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed 260°C /10sec/ 0.375 lead length at 5 lbs tension

CHONGQING

平伟实业

SB590

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead l

SY

顺烨电子

SB590

Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 100 V CURRENT: 5.0A Features ◇ Metal-semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection applicati

LUGUANG

鲁光电子

SB590

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 5.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High tem

SHUNYE

顺烨电子

SB590

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 100 V CURRENT: 5.0A FEATURES ◇ Metal-semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage, high frequency inverters free wheeling, and polarity protection applica

DSK

SB590

MEDIUM CURRENT SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 5.0 Amperes Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop

GOOD-ARK

固锝电子

SB590

Schottky barrier rectifiers diodes

Forward Current: 5 A Reverse Voltage: 20 to 100 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0 Mechanical Data ● Plastic case DO-201 ● Weight approx.: 1g ● Terminals: plated terminals solderable per MIL-STD-750 ● Mounting position: any ● St

SEMIKRON

赛米控丹佛斯

SB590

5.0Amp Schottky Barrier Rectifiers

Features ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: 250°C/10 seconds,0.375(9.5

YFWDIODE

佑风微

SB590

Schottky

DIODES

美台半导体

SB590

Schottky barrier rectifiers diodes

文件:137.81 Kbytes Page:2 Pages

SEMIKRON

赛米控丹佛斯

SB590

SCHOTTKY BARRIER RECTIFIER

文件:128.33 Kbytes Page:2 Pages

YIXIN

壹芯微

SB590

SCHOTTKY RECTIFIER VOLTAGE RANGE - 90 and 100 Volts CURRENT - 5.0 Amperes

文件:103.86 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SB590

5.0A SCHOTTKY BARRIER RECTIFIER

文件:92.35 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SB590

SCHOTTKY BARRIER RECTIFIER

文件:568.25 Kbytes Page:2 Pages

SY

顺烨电子

SB590

SCHOTTKY BARRIER RECTIFIER DIODES

文件:62.23 Kbytes Page:2 Pages

EIC

SB590

Schottky Barrier Rectifiers

文件:59.03 Kbytes Page:2 Pages

DIOTEC

德欧泰克

SB590

Schottky Barrier Rectifier Diodes

文件:132.42 Kbytes Page:2 Pages

DIOTEC

德欧泰克

SB590

Schottky Barrier Rectifier Diodes

文件:93.3 Kbytes Page:2 Pages

DIOTEC

德欧泰克

SB590

Schottky Barrier Rectifier Diodes

文件:152.73 Kbytes Page:2 Pages

DIOTEC

德欧泰克

SB590

Schottky Barrier Rectifier Diodes

文件:138.32 Kbytes Page:2 Pages

DIOTEC

德欧泰克

5.0A SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability • Surge Overload Rating to 150A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications •

DIODES

美台半导体

5.0A SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability • Surge Overload Rating to 150A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications •

DIODES

美台半导体

Schottky Barrier Rectifiers

EIC

SCHOTTKY BARRIER RECTIFIER DIODES

文件:52.21 Kbytes Page:2 Pages

EIC

SCHOTTKY BARRIER RECTIFIER DIODES

文件:28.6 Kbytes Page:2 Pages

EIC

封装/外壳:DO-201AD,轴向 包装:卷带(TR) 描述:DIODE SCHOTTKY 90V 5A DO201AD 分立半导体产品 二极管 - 整流器 - 单

DIODES

美台半导体

丝印代码:-MH;NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

PHILIPS

飞利浦

丝印代码:-MN;NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications

PHILIPS

飞利浦

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

PHILIPS

飞利浦

NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communicat

PHILIPS

飞利浦

Addressable peripheral drivers

DESCRIPTION The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The device has eight Darlington power outputs, each capable of 250mA load current. The outputs are turned on or off by respectively loading a logic high

PHILIPS

飞利浦

SB590产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    Standard

  • Configuration:

    Single

  • MaximumAverageRectifiedCurrent IO (A):

    5 A

  • @ TerminalTemperature TT (ºC):

    80 ºC

  • Peak RepetitiveReverse VoltageVRRM (V):

    90 V

  • Peak ForwardSurge CurrentIFSM (A):

    150 A

  • Forward Voltage Drop VF (V):

    0.8 V

  • @ IF (A):

    5 A

  • Maximum ReverseCurrent IR (µA):

    500 µA

  • @ VR (V):

    90 V

  • TotalCapacitance CT (pF):

    400 pF

  • Packages:

    DO-201AD

更新时间:2026-5-20 10:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
Diodes
25+
电联咨询
7800
公司现货,提供拆样技术支持
24+
DO-27
66530
全新原装现货/假一罚百!
26+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
ON/DIODES/PANJIT
24+
DO201AD
43000
LRC
22+
DO-201AD
1622
原装现货
Diodes Incorporated
25+
DO-201AD
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
Diodes Incorporated
25+
DO-201AD
6843
样件支持,可原厂排单订货!
LRC/乐山
23+
DO-201AD
360000
原装现货
LRC/乐山
21+
DO-201AD
30000
百域芯优势分销LRC 实单必成可开增值税

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