Power Schottky Rectifier - 5Amp 45Volt

□ Features - Low forward voltage drop - High current capability - High reliability - High surge current capability - Epitaxial construction

5A SCHOTTKY BARRIER RECTIFIER Reverse Voltage 45 Volts Forward Current 5.0 Amperes

Features ● Metal silicon junction, majority carrier conduction ● Guardring for overvoltage protection ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0

5.0Amp Schottky Barrier Rectifiers

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Low forward voltage drop Low reverse leakage High forward surge current capability High temperature soldering guaranteed 260 C/10 seconds at terminals

DIODE:Middle Schottky

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

丝印代码：20-；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：21*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：22*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-