BD545晶体管资料
BD545别名：BD545三极管、BD545晶体管、BD545晶体三极管
BD545生产厂家：美国得克萨斯仪表公司
BD545制作材料：Si-NPN
BD545性质：低频或音频放大 （LF）_功率放大 （L）
BD545封装形式：直插封装
BD545极限工作电压：40V
BD545最大电流允许值：15A
BD545最大工作频率：<1MHZ或未知
BD545引脚数：3
BD545最大耗散功率：85W
BD545放大倍数：
BD545图片代号：B-10
BD545vtest：40
BD545htest：999900
- BD545atest：15
BD545wtest：85
BD545代换 BD545用什么型号代替：BD705,BD743,BD905,3DD69B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD545 | isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif | ISC 无锡固电 |   | |
BD545 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD545 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | | |
BD545 | NPN SILICON POWER TRANSISTORS 文件：104.33 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | |
支持数字输入的D类扬声器放大器 BD5452AMUV是针对超薄电视等省空间、节能用途而开发的，支持15W+15W数字输入的立体声D类扬声器放大器。采用最先进的BCD（Bipolar, CMOS and DMOS）工艺技术，以及小型背面散热型功率封装，具备低功耗、低发热量，无需散热片即可实现总体最大30W输出。是同时满足音响类系统大幅小型化、薄型化以及强感染力、高音质播放两方面需求的产品。 ・ This IC has one system of digital audio interface.(I2S format, SDATA: 16 / 20 / 24bit, LRCLK: 32kHz / 44.1kHz / 48kHz, BCLK: 64fs(fixed), MCLK: 256fs / 512fs)\n・ Low supply current at RESET mode.\n・ The decrease in sound quality because of the change of the power supply voltage is prevented with t; | ROHM 罗姆 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | POINN | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif | ISC 无锡固电 | | ||
Designed for Complementary Use with the BD546 Series NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | BOURNS 伯恩斯 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in l | PANJIT 強茂 | | ||
Class-D Speaker Amplifier for Digital Input 文件：694.42 Kbytes Page：35 Pages | ROHM 罗姆 | | ||
Silicon Semiconductor integrated circuits 文件：156.18 Kbytes Page：5 Pages | ROHM 罗姆 | | ||
Class-D Speaker Amplifier for Digital Input 文件：694.42 Kbytes Page：35 Pages | ROHM 罗姆 | | ||
Class D Speaker Amplifier for Digital Input 文件：1.34313 Mbytes Page：55 Pages | ROHM 罗姆 | | ||
Class D Speaker Amplifier for Digital Input 文件：1.34313 Mbytes Page：55 Pages | ROHM 罗姆 | | ||
NPN SILICON POWER TRANSISTORS 文件：104.33 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | ||
Trans GP BJT NPN 60V 15A 3-Pin(3+Tab) SOT-93 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
TRANS NPN 60V 15A SOT-93 | BOURNS 伯恩斯 | | ||
NPN SILICON POWER TRANSISTORS 文件：104.33 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：管件 描述：TRANS NPN 80V 15A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
NPN SILICON POWER TRANSISTORS 文件：104.33 Kbytes Page：5 Pages | BOURNS 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：卷带（TR） 描述：TRANS NPN DARL 100V 15A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：79.34 Kbytes Page：2 Pages | PANJIT 強茂 | | ||
5.0 A SCHOTTKY BARRIER DIODE 文件：146.78 Kbytes Page：2 Pages | ZSELEC 淄博圣诺 | | ||
丝印代码：20-；N-channel silicon junction field-effect transistors DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra- | PHILIPS 飞利浦 | | ||
丝印代码：21*；N-channel silicon junction field-effect transistors DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra- | PHILIPS 飞利浦 | | ||
丝印代码：22*；N-channel silicon junction field-effect transistors DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra- | PHILIPS 飞利浦 | |
BD545产品属性
- 类型
描述
- Vcc(Max.)[V]：
18.0
- Iq[mA]：
50.0
- Ext. Gain：
No
- Maximum Output Gain[dB]：
26.0
- I/F：
Stand alone
- Digital Audio I/F：
I2S
- Speaker Amp Outputs：
2.0
- Speaker Amp THD+N[%]：
0.07
- Speaker Amp PSRR[dB]：
70.0
- Speaker Amp Input Type：
Digital Signal
- Speaker Amp Type：
Class D
- Speaker Amp Output Power(Max.)[W]：
15
- Operating Temperature (Min.)[°C]：
-25
- Operating Temperature (Max.)[°C]：
85
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Bourns Inc. |
25+ |
SOT-93 |
18746 |
样件支持,可原厂排单订货! |
|||
Bourns Inc. |
25+ |
SOT-93 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ROHM |
2016+ |
QFN |
3796 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
24+ |
SOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ROHM/罗姆 |
2026+ |
VQFN32 |
4816 |
原装正品 假一罚十! |
|||
ROHM/罗姆 |
25+ |
SOP |
32360 |
ROHM/罗姆全新特价BD5451EFV-E2即刻询购立享优惠#长期有货 |
|||
TI |
24+/25+ |
160 |
原装正品现货库存价优 |
||||
ROHM/罗姆 |
2450+ |
QFN |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
25+ |
TO-220 |
20000 |
原装，请咨询 |
|||
ROHM/罗姆 |
/ROHS.original |
原封 |
22102 |
电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU. |
BD545规格书下载地址
BD545参数引脚图相关
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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LSI逻辑公司提供以下驱动器/接收器输入/输出（的I / O），作为一般用途的I / O缓冲器细胞： •bd4f5fsls33 •bd4puf5fsls33 •bd4puodf5fsls33 •bd4puodf5fscls33 该I / O缓冲器提供芯片外，双向I/ O的applicationspecific信号集成电路（ASIC）的LSI逻辑芯片实现G12号™- P的0.13微米工艺技术。具有类似功能的I / O缓冲器提供一个不同的驱动程序选项的ASIC应用。
2013-3-5
DdatasheetPDF页码索引
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