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BD545晶体管资料
BD545别名：BD545三极管、BD545晶体管、BD545晶体三极管
BD545生产厂家：美国得克萨斯仪表公司
BD545制作材料：Si-NPN
BD545性质：低频或音频放大 （LF）_功率放大 （L）
BD545封装形式：直插封装
BD545极限工作电压：40V
BD545最大电流允许值：15A
BD545最大工作频率：<1MHZ或未知
BD545引脚数：3
BD545最大耗散功率：85W
BD545放大倍数：
BD545图片代号：B-10
BD545vtest：40
BD545htest：999900
- BD545atest：15
BD545wtest：85
BD545代换 BD545用什么型号代替：BD705,BD743,BD905,3DD69B,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BD545 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | POINN Power Innovations Ltd |   | |
BD545 | isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif | ISC 无锡固电 | | |
BD545 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BD545 | NPN SILICON POWER TRANSISTORS 文件：104.33 Kbytes Page：5 Pages | Bourns 伯恩斯 | | |
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | POINN Power Innovations Ltd | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | POINN Power Innovations Ltd | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | POINN Power Innovations Ltd | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Designed for Complementary Use with the BD546 Series NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available | Bourns 伯恩斯 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low | PANJIT 強茂 | | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in l | PANJIT 強茂 | | ||
Silicon Semiconductor integrated circuits 文件：156.18 Kbytes Page：5 Pages | ROHM 罗姆 | | ||
Class-D Speaker Amplifier for Digital Input 文件：694.42 Kbytes Page：35 Pages | ROHM 罗姆 | | ||
Class-D Speaker Amplifier for Digital Input 文件：694.42 Kbytes Page：35 Pages | ROHM 罗姆 | | ||
Class D Speaker Amplifier for Digital Input 文件：1.34313 Mbytes Page：55 Pages | ROHM 罗姆 | | ||
Class D Speaker Amplifier for Digital Input 文件：1.34313 Mbytes Page：55 Pages | ROHM 罗姆 | | ||
NPN SILICON POWER TRANSISTORS 文件：104.33 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
NPN SILICON POWER TRANSISTORS 文件：104.33 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：管件 描述：TRANS NPN 80V 15A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
NPN SILICON POWER TRANSISTORS 文件：104.33 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
封装/外壳：TO-218-3 包装：卷带（TR） 描述：TRANS NPN DARL 100V 15A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 文件：79.34 Kbytes Page：2 Pages | PANJIT 強茂 | | ||
5.0 A SCHOTTKY BARRIER DIODE 文件：146.78 Kbytes Page：2 Pages | ZSELEC 淄博圣诺电子 | | ||
CE conformity FEATURES J J I4 « CE conformity * Built to meet European Standard BS EN 60335-2-45 ! * Full power range from 12 to 50 watt * Wide choice of input voltages * “Thermally balanced” fixed setting and “In Handle” adjustable temperature models * Wide range of soldering and desoldering-b | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
DOLBY-B NOISE PROCESSOR 文件：974.5 Kbytes Page：20 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
545 provides the following product characteristics 文件：79.47 Kbytes Page：3 Pages | HENKEL 汉高 | | ||
GaAs MMIC SPDT SWITCH, DC - 3 GHz 文件：199.85 Kbytes Page：6 Pages | Hittite | | ||
TO-8 CASCADABLE AMPLIFIERS 文件：176.97 Kbytes Page：2 Pages | TELEDYNE 华特力科 | |
BD545产品属性
- 类型
描述
- 型号
BD545
- 功能描述
两极晶体管 - BJT 70W NPN Silicon
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
PANJIT |
25+23+ |
TO-252(DPAK) |
21623 |
绝对原装正品全新进口深圳现货 |
|||
ROHM |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
|||
ROHM |
22+23+ |
TSSOP28 |
8000 |
新到现货，只做原装进口 |
|||
ROHM/罗姆 |
2023+ |
HTSSOP28 |
1972 |
十五年行业诚信经营,专注全新正品 |
|||
ROHM |
23+ |
SOP |
3847 |
原厂原装正品 |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
ROHM |
25+ |
SMD |
20000 |
专做罗姆，一系列可以订货排单，只做原装正品假一罚十 |
|||
ROHM |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
|||
24+ |
TO-220 |
10000 |
全新 |
BD545规格书下载地址
BD545参数引脚图相关
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2013-3-5
DdatasheetPDF页码索引
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