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SB170

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automatic Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 25A Peak • For Use in Low Voltage, High Frequency Inverte

DIODES

美台半导体

SB170

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Flame retardant epoxy molding compound ● 1.0 ampere operation at TL=90 with no thermal runaway ● For use in low voltage, high frequen

GOOD-ARK

固锝电子

SB170

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appl

BILIN

银河微电

SB170

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability

SY

顺烨电子

SB170

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead l

SY

顺烨电子

SB170

SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Low cost

SYNSEMI

SB170

Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection app

LUGUANG

鲁光电子

SB170

SCHOTTKY BARRIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead l

SHUNYE

顺烨电子

SB170

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appl

DSK

SB170

1.0Amp Schottky Barrier Rectifiers

Features ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: ♦ Metal silicon junction,majority carrier conduction 250°C/10 seconds,0.375(9.5mm) le

YFWDIODE

佑风微

SB170

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere FEATURES ✦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ✦ Metal silicon junction,majority carrier conduction ✦ Low power loss,high efficiency ✦ High forward surge current capability ✦

CHENDA

辰达半导体

SB170

DIODE:Middle Schottky

分立

FS

SB170

肖特基整流管

·Metal-Semiconductor junction with guardring\n·Epitaxial construction\n·Low forward voltage drop\n·High current capability The plastic material carries UL recognition 94V-0\n·For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications;

GOOD-ARK

固锝电子

SB170

Schottky Diodes

文件:797.42 Kbytes Page:2 Pages

KEXIN

科信电子

SB170

REVERSE VOLTGE 20V~100V, FORWARD CURRENT 1.0AMP Schottky Barrier Rectifiers

文件:428.91 Kbytes Page:2 Pages

FS

SB170

Schottky: Thru Hole Packages

SYNSEMI

SB170

SCHOTTKY BARRIER RECTIFIER

文件:259.51 Kbytes Page:2 Pages

SHUNYE

顺烨电子

SB170

SCHOTTKY BARRIER RECTIFIER DIODES

文件:28.85 Kbytes Page:2 Pages

EIC

SB170

SCHOTTKY BARRIER RECTIFIER DIODES

文件:39.16 Kbytes Page:2 Pages

EIC

SB170

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件:68.11 Kbytes Page:2 Pages

DIODES

美台半导体

1.0 Amp Schottky Barrier Rectifiers Voltage Range 70 to 100 volts Forward Current 1.0 Ampere

Voltage Range 70 to 100 volts Forward Current 1.0 Ampere Features Metal-Semiconductor junction with guardring Epitaxial construction Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inve

GOOD-ARK

固锝电子

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ◆ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Low power loss,high efficiency ◆ High forward surge current capability ◆

SHUNYE

顺烨电子

Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appl

LUGUANG

鲁光电子

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES ◆ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Low power loss,high efficiency ◆ High forward surge current capability ◆

SY

顺烨电子

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appl

BILIN

银河微电

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appl

DSK

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件:68.11 Kbytes Page:2 Pages

DIODES

美台半导体

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件:64.68 Kbytes Page:2 Pages

DIODES

美台半导体

Schottky Barrier Rectifiers Reverse Voltage 70 to 100 Volts Forward Current 1.0 Ampere

文件:152.54 Kbytes Page:2 Pages

GOOD-ARK

固锝电子

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件:68.11 Kbytes Page:2 Pages

DIODES

美台半导体

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件:68.11 Kbytes Page:2 Pages

DIODES

美台半导体

SCHOTTKY BARRIER RECTIFIER

文件:584.54 Kbytes Page:2 Pages

CHENDA

辰达半导体

封装/外壳:DO-204AL,DO-41,轴向 包装:卷带(TR) 描述:DIODE SCHOTTKY 70V 1A DO41 分立半导体产品 二极管 - 整流器 - 单

DIODES

美台半导体

1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

文件:68.11 Kbytes Page:2 Pages

DIODES

美台半导体

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

MOTOROLA

摩托罗拉

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

MOTOROLA

摩托罗拉

SB170产品属性

  • 类型

    描述

  • Compliance (Only Automotive supports PPAP):

    Standard

  • Configuration:

    Single

  • MaximumAverageRectifiedCurrent IO (A):

    1 A

  • @ TerminalTemperature TT (ºC):

    85 ºC

  • Peak RepetitiveReverse VoltageVRRM (V):

    70 V

  • Peak ForwardSurge CurrentIFSM (A):

    25 A

  • Forward Voltage Drop VF (V):

    0.8 V

  • @ IF (A):

    1 A

  • Maximum ReverseCurrent IR (µA):

    500 µA

  • @ VR (V):

    70 V

  • TotalCapacitance CT (pF):

    80 pF

  • Packages:

    DO-41 (Plastic)

更新时间:2026-5-14 16:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EIC
24+
DO-41
35200
一级代理/放心采购
n/a
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
JST/日压
2608+
/
337362
一级代理,原装现货
ON/DIODES/PANJIT
24+
DO41
43000
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
DIODES/美台
23+
DO41
6000
原装正品假一罚百!可开增票!
ST
26+
2012-GRN
60000
只有原装 可配单
INF
2024+
SOP
50000
原装现货
DIODES/美台
2447
DO41
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST
25+
2012-GRN
20000
原装

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