Microwire BUS 8Kbit(512 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 8Kbit(512 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 8Kbit(512 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 8Kbit(512 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing

Microwire BUS 8Kbit(512 x 16bit) EEPROM

ROHMs series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing