NPN Epitaxial Silicon Transistor

FEATURE Power dissipation PCM : 0.625 W Tamb=25 °C Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150 °C

NPN小信号三极管

Small Signal Transistor

NPN Epitaxial Silicon Transistor

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NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO: 45 V

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.